MA4AGBLP912 AlGaAs Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ V3 MA4AGBLP912 Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant Topside Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabricated on a OMCVD epitaxial wafer using a process optimized for high device uniformity and extremely low parasitics. The diode exhibits low series resistance, 4Ω, low capacitance, 28fF, and an extremely fast switching speed of 5nS. It is fully passivated with silicon nitride and has an additional polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly. Bottom Absolute Maximum Ratings @ TAMB = 25°C (unless otherwise specified) Parameter Reverse Voltage Applications The ultra low capacitance of the MA4AGBLP912 device makes it ideally suited for use through W-band. The low RC product and low profile of the beamlead PIN diode allows for use in microwave and millimeter wave switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +10mA for the low loss state, and 0V, for the isolation state permits the use of a simple +5V TTL gate driver. AlGaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. Absolute Maximum -50V Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C Junction Temperature +175°C Forward DC Current 40mA C.W. Incident Power +23dBm Mounting Temperature +235°C for 10 seconds 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MA4AGBLP912 AlGaAs Beamlead PIN Diode V3 Electrical Specifications at TAMB = 25°C Test Conditions Paramters Units Min Typical Max. Total Capacitance @ –5V/1 MHz Ct fF – 26 30 Forward Resistance @ +20mA/1 GHz Rs Ohms – 4 4.9 Forward Voltage at +10mA Vf Volts 1.2 1.36 1.5 Leakage Current at –40 V Ir nA – 50 300 Minority Carrier Lifetime TL nS – 5 10 INCHES DIM 2 MM MIN. MAX. MIN. MAX. A 0.009 0.013 0.2286 0.3302 B 0.0049 0.0089 0.1245 0.2261 C 0.0037 0.0057 0.0940 0.1448 D 0.0049 0.0089 0.1245 0.2261 E 0.002 0.006 0.0508 0.1524 F 0.0218 0.0278 0.5537 0.70612 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MA4AGBLP912 AlGaAs Beamlead PIN Diode V3 Diode Model Rs Ls = 0.5 Ct MA4AGBLP912 SPICE Model Is=1.0E-14 A Vi=0.0 V wBv= 50 V μe-= 8600 cm^2/V-sec wPmax= 100 mW Ffe= 1.0 Wi= 3.0 um Rr= 10 K Ohms Cjmin= 0.020 pF Tau= 10 nsec Rs(I)= Rc + Rj(I) = 0.10 Ohm + Rj(I) Cj0= 0.022 pF Vj= 1.35 V M= 0.5 Fc= 0.5 Imax= 0.04 A Kf= 0.0 Af=1.0 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MA4AGBLP912 AlGaAs Beamlead PIN Diode V3 Handling and Assembly Procedures The following precautions should be observed to avoid damaging these devices. Cleanliness These devices should be handled in a clean environment. Static Sensitivity Aluminum Gallium Arsenide PIN diodes are Class 1 ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. General Handling These devices have a polymer layer which provides scratch protection for the junction area and the anode air bridge. Beam lead devices must, however, be handled with extreme care since the leads may easily be distorted or broken by the normal pressures exerted when handled with tweezers. A vacuum pencil with a #27 tip is recommended for picking and placing. Attachment These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive silver epoxy. Ordering Information Part Number Packaging MA4AGBLP912 Gel Pak 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.