Product Brief TRENCHSTOP™ 5 L5 The New Efficiency Benchmark for Polarity Switches at 50Hz Infineon’s L5 low saturation voltage VCE(sat) TRENCHSTOP™ 5 IGBT family has been specifically optimized for polarity switches operating at switching frequencies from 50Hz-20kHz. The intrinsically low conduction losses of the 55µm TRENCHSTOP™ 5 thin wafer technology have been reduced further with additional optimization of the carrier profile. Lowest VCE(sat) value of 1.05V With a typical VCE(sat) value at 25°C of 1.05V at nominal current, our customers can achieve new levels of efficiency when used, for example, as inner switches in 3-level NPC topologies as found in UPS and PV inverters. Low switching losses Yet despite the unmatched low conduction losses, the device performance is not compromised by increased switching losses. And the total energy losses are low. As low as 1.6mJ at 25°C 1). Key Features Lowest saturation voltage VCE(sat) of only 1.05V 1) Low switching losses of 1.6mJ @ 25°C 1) High thermal stability of electrical parameters – only 2% drift with Tj increase from 25°C to 175°C Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package Key Benefits Higher efficiency for 50Hz Low VCE(sat) Optimized TRENCHSTOP™ 5 L5 Competition – Trade off 2) Longer lifetime and higher reliability of IGBT Total switching losses [Etot(mJ)] Comp. 1 (30A) High design reliability due to stable Overrated IGBT still cannot compete with L5 in terms of conduction and switching losses thermal performance 10.0 5.0 4.0 Comp. 4 (60A) 3.0 2.0 Applications Comp. 2 (50A) IKW30N65EL5 (30A) UPS – inner switches 3 Level NPC 1, NPC 2 Comp. 3 (50A) 1.00 1.05 1.10 1.15 VCE(sat) 1) Datasheets value for 30A DuoPack IGBT, IKW30N65EL5 2) Tvj = 25°C, ICE = 30A, Rg = 10Ω www.infineon.com/trenchstop5-L5 1.20 1.25 Solar – modified HERIC inverter AC Output – Al /Mg Welding Product Brief TRENCHSTOP™ 5 L5 The New Efficiency Benchmark for Polarity Switches at 50Hz Optimal performance and high thermal stability The mild positive temperature coefficient of VCE(sat) with only 2% drift under temperature change from 25°C to 175°C allows easy paralleling keeping the efficiency high. High efficiency and low switching losses of the L5 IGBT simplifies thermal management allowing to reduce the cooling infrastructure, using less heat sink and a smaller fan, thus significantly lowering the manufacturing costs. Typical Topologies and Application for Low VCE(sat) L5 IGBT 3 level inverter type 1 NPC 1 & NPC 2 L5 L5 Modifies HERIC inverter AC Output (Aluminium/Magnesium welding) L5 L5 L5 L5 L5 L5 L5 L5 Exhanced efficiency, lower switching losses with innovative TO-247 4pin Kelvin-Emitter package Low VCE(sat) L5 DuoPack IGBT in 75A is offered in an innovative TO-247 4pin Kelvin-Emitter package. When compared to the standard TO-247 package, the TO-247 4pin Kelvin-Emitter package modification allows 20% reduction of switching losses. For more information on TO-247 4pin Kelvin-Emitter package visit www.infineon.com/TO-247-4 C The L5 low VCE(sat) TRENCHSTOP™ 5 Package Partname E1 E2 G 3) TO-247 TO-247 TO-247 TO-247 TO-247 4pin IKW30N65EL5 IKW30N65NL5 IGW30N65L5 IKW75N65EL5 IKZ75N65EL5 Current Class 30A 30A 30A 75A 75A VCE(sat) [V] 1.05 1.05 1.05 1.05 1.05 Vbr [V] 650 650 650 650 650 Qg [nC] 168 168 168 436 436 Eon [mJ] 0.47 0.56 0.47 1.61 1.57 Eoff [mJ] 1.35 1.35 1.35 3.20 3.20 TRENCHSTOP™ 5 L5 IGBT + Fast Rapid 1 Diode TRENCHSTOP™ 5 L5 IGBT + Ultra Fast Rapid 2 Diode Single TRENCHSTOP™ 5 L5 IGBT TRENCHSTOP™ 5 L5 IGBT + Fast Rapid 1 Diode TRENCHSTOP™ 5 L5 IGBT + Fast Rapid 1 Diode Short description 3) Characterization measurement: Tvj = 25°C, Vcc = 400V, Ic = Inom, Vge = 0/15V, Rg = 10Ω, L = 60nH, C = 30pF. Energy loss incl. “tail” and diode reverse recovery Published by Infineon Technologies Austria AG 9500 Villach, Austria © 2015 Infineon Technologies AG. All Rights Reserved. Visit us: www.infineon.com Order Number: B114-I0078-V1-7600-EU-EC-P Date: 01 / 2015 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/ or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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