IGW30N65L5 Data Sheet (1.7 MB, EN)

IGBT
LowVCE(sat)IGBTinTRENCHSTOPTM5technology
IGW30N65L5
650VIGBTLowVCE(sat)seriesfifthgeneration
Datasheet
IndustrialPowerControl
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
LowVCE(sat)IGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
C
LowVCE(sat)L5technologyoffering
•Verylowcollector-emittersaturationvoltageVCEsat
•Best-in-Classtradeoffbetweenconductionandswitchinglosses
•650Vbreakdownvoltage
•LowgatechargeQG
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating
•RoHScompliant
•CompleteproductspectrumandPSpicemodels:
http://www.infineon.com/igbt/
G
E
Applications:
•Uninterruptiblepowersupplies
•Solarphotovoltaicinverters
•Weldingmachines
G
C
E
KeyPerformanceandPackageParameters
Type
IGW30N65L5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
30A
1.05V
175°C
G30EL5
PG-TO247-3
2
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC
85.0
62.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
120.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
120.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
227.0
114.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
2)
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.66
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
650
-
-
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
-
1.05
1.05
1.04
1.35
-
VGE(th)
IC=0.40mA,VCE=VGE
4.2
5.0
5.8
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=150°C
Tvj=175°C
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=30.0A
-
65.0
-
S
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
Gate-emitter threshold voltage
1)
2)
-
40.0
400.0
2000.0
-
V
V
V
µA
Defined by design. Not subject to production test.
Package not recommended for surface mount applications.
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Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
4900
-
-
42
-
-
18
-
-
168.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=30.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
33
-
ns
-
11
-
ns
-
308
-
ns
-
51
-
ns
-
0.47
-
mJ
-
1.35
-
mJ
-
1.82
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=60nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Diode: IDW30E65D1.
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
31
-
ns
-
13
-
ns
-
370
-
ns
-
150
-
ns
-
0.68
-
mJ
-
2.18
-
mJ
-
2.86
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=60nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Diode: IDW30E65D1.
5
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
250
100
225
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
200
10
1
175
150
125
100
75
50
25
not for linear use
0.1
1
10
100
0
1000
25
VCE,COLLECTOR-EMITTERVOLTAGE[V]
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,
ICmaxdefinedbydesign-notsubjectto
production test)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
90
90
VGE = 20V
80
80
70
70
18V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
15V
60
50
40
30
12V
8V
50
10
10
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
6V
30
20
25
7V
40
20
0
10V
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
6
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
90
90
VGE = 20V
80
Tvj=25°C
Tvj=150°C
80
18V
15V
70
12V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
70
10V
60
8V
50
7V
6V
40
5V
30
60
50
40
30
20
20
10
10
0
0.0
0.5
1.0
1.5
2.0
2.5
0
3.0
2
VCE,COLLECTOR-EMITTERVOLTAGE[V]
3
4
5
6
7
8
9
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
IC=7.5A
IC=15A
IC=30A
td(off)
tf
td(on)
tr
1.125
1000
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
1.250
1.000
0.875
0.750
100
10
0.625
0.500
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
10
20
30
40
50
60
70
80
90
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
7
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
10
1
0.0
10.0
td(off)
tf
td(on)
tr
1000
20.0
30.0
40.0
50.0
60.0
100
10
1
70.0
25
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=30A,dynamictestcircuitin
Figure E)
100
125
150
175
7
typ.
min.
max.
Eoff
Eon
Ets
6
6
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
7
5
4
3
2
1
50
Tvj,JUNCTIONTEMPERATURE[°C]
5
4
3
2
1
25
50
75
100
125
150
0
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
10
20
30
40
50
60
70
80
90
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.4mA)
8
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,
dynamic test circuit in Figure E)
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
3.5
3.5
Eoff
Eon
Ets
3.0
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
2.5
2.0
1.5
1.0
0.5
0
10
20
30
40
50
60
0.0
70
25
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=30A,dynamictestcircuitin
Figure E)
125
150
175
VCC=130V
VCC=520V
14
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
100
16
Eoff
Eon
Ets
2.8
2.4
2.0
1.6
1.2
0.8
12
10
8
6
4
2
0.4
0.0
200
75
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
3.6
3.2
50
Tvj,JUNCTIONTEMPERATURE[°C]
250
300
350
400
450
0
500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
0
20
40
60
80
100 120 140 160 180
QG,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=30A)
9
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
1
C,CAPACITANCE[pF]
1E+4
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Cies
Coes
Cres
1000
100
10
0
5
10
15
20
25
D = 0.5
0.2
0.1
0.05
0.02
single pulse
i:
1
2
3
4
5
6
ri[K/W]: 0.010702 0.155056 0.172937 0.290173 0.027136 2.2E-3
τi[s]:
2.0E-5
2.2E-4
2.0E-3
0.011473 0.092564 1.827121
0.01
1E-6
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0.01
0.1
1E-5
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
10
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
PG-TO247-3
11
Rev.2.1,2014-12-10
IGW30N65L5
LowVCE(sat)seriesfifthgeneration
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
12
Rev.2.1,2014-12-10
IGW30N65L5
Low VCE(sat) series fifth generation
Revision History
IGW30N65L5
Revision: 2014-12-10, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-12-10
Final data sheet
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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
13
Rev. 2.1, 2014-12-10