IGBT LowVCE(sat)IGBTinTRENCHSTOPTM5technology IGW30N65L5 650VIGBTLowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl IGW30N65L5 LowVCE(sat)seriesfifthgeneration LowVCE(sat)IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: C LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating •RoHScompliant •CompleteproductspectrumandPSpicemodels: http://www.infineon.com/igbt/ G E Applications: •Uninterruptiblepowersupplies •Solarphotovoltaicinverters •Weldingmachines G C E KeyPerformanceandPackageParameters Type IGW30N65L5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 30A 1.05V 175°C G30EL5 PG-TO247-3 2 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 3 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 85.0 62.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 120.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 120.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 227.0 114.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C 2) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.66 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=30.0A Tvj=25°C Tvj=100°C Tvj=150°C - 1.05 1.05 1.04 1.35 - VGE(th) IC=0.40mA,VCE=VGE 4.2 5.0 5.8 Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=150°C Tvj=175°C Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 65.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Gate-emitter threshold voltage 1) 2) - 40.0 400.0 2000.0 - V V V µA Defined by design. Not subject to production test. Package not recommended for surface mount applications. 4 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 4900 - - 42 - - 18 - - 168.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=30.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 33 - ns - 11 - ns - 308 - ns - 51 - ns - 0.47 - mJ - 1.35 - mJ - 1.82 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0Ω,RG(off)=10.0Ω, Lσ=60nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode: IDW30E65D1. SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 31 - ns - 13 - ns - 370 - ns - 150 - ns - 0.68 - mJ - 2.18 - mJ - 2.86 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0Ω,RG(off)=10.0Ω, Lσ=60nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode: IDW30E65D1. 5 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration 250 100 225 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 200 10 1 175 150 125 100 75 50 25 not for linear use 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs, ICmaxdefinedbydesign-notsubjectto production test) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 90 90 VGE = 20V 80 80 70 70 18V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 60 50 40 30 12V 8V 50 10 10 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 6V 30 20 25 7V 40 20 0 10V 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 6 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration 90 90 VGE = 20V 80 Tvj=25°C Tvj=150°C 80 18V 15V 70 12V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 10V 60 8V 50 7V 6V 40 5V 30 60 50 40 30 20 20 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 3 4 5 6 7 8 9 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) IC=7.5A IC=15A IC=30A td(off) tf td(on) tr 1.125 1000 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 1.250 1.000 0.875 0.750 100 10 0.625 0.500 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 70 80 90 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,dynamic test circuit in Figure E) 7 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 1 0.0 10.0 td(off) tf td(on) tr 1000 20.0 30.0 40.0 50.0 60.0 100 10 1 70.0 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) 100 125 150 175 7 typ. min. max. Eoff Eon Ets 6 6 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic test circuit in Figure E) 7 5 4 3 2 1 50 Tvj,JUNCTIONTEMPERATURE[°C] 5 4 3 2 1 25 50 75 100 125 150 0 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 70 80 90 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.4mA) 8 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω, dynamic test circuit in Figure E) Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration 3.5 3.5 Eoff Eon Ets 3.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Eoff Eon Ets 2.5 2.0 1.5 1.0 0.5 0 10 20 30 40 50 60 0.0 70 25 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) 125 150 175 VCC=130V VCC=520V 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 100 16 Eoff Eon Ets 2.8 2.4 2.0 1.6 1.2 0.8 12 10 8 6 4 2 0.4 0.0 200 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic test circuit in Figure E) 3.6 3.2 50 Tvj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic test circuit in Figure E) 0 20 40 60 80 100 120 140 160 180 QG,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=30A) 9 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration 1 C,CAPACITANCE[pF] 1E+4 Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Cies Coes Cres 1000 100 10 0 5 10 15 20 25 D = 0.5 0.2 0.1 0.05 0.02 single pulse i: 1 2 3 4 5 6 ri[K/W]: 0.010702 0.155056 0.172937 0.290173 0.027136 2.2E-3 τi[s]: 2.0E-5 2.2E-4 2.0E-3 0.011473 0.092564 1.827121 0.01 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0.01 0.1 1E-5 1E-4 0.001 0.01 0.1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalimpedance (D=tp/T) 10 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration PG-TO247-3 11 Rev.2.1,2014-12-10 IGW30N65L5 LowVCE(sat)seriesfifthgeneration VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 12 Rev.2.1,2014-12-10 IGW30N65L5 Low VCE(sat) series fifth generation Revision History IGW30N65L5 Revision: 2014-12-10, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-12-10 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 Rev. 2.1, 2014-12-10