Product Brief TRENCHSTOP™ 5 S5

Product Brief
The new TRENCHSTOP™ 5 S5 IGBT
High speed, soft switching IGBT with full rated current diode
Developed with the customer in mind
TRENCHSTOP™ 5 S5 is the new IGBT family addressing applications switching between
10 kHz and 40 kHz to deliver high efficiency, faster time to market cycles, circuit design
complexity reduction and PCB bill of material cost optimization.
Packed with features to help the designers achieve their goals without the need to
increase circuit complexity
››Static behavior - mild positive temperature coefficient VCE(sat), meaning paralleling is no
problem and efficiency isn’t compromised during high temperature operation. At 175°C,
typical VCE(sat) is a low 1.6 V.
››Dynamic behavior – single gate resistance selection for turn-on / turn-off due to the soft
switching behavior. Clean gate signals, low dV/dt, low and very symmetrical voltage
overshoot.
To highlight the dynamic behavior, TRENCHSTOP™ 5 S5 switching turn-off waveforms
are added*
IC
VCE(peak) = 481 V
››Very low V
of 1.35 V at 25°C, 20%
lower than TRENCHSTOP™ 5 H5
››IC(n) = four times nominal current
(100°C Tc)
››Soft current fall characteristic with
no tail current
››Symmetrical, low voltage overshoot
››Gate voltage under control
(no oscillation). No risk of unwanted
turn-on of device and no need for
gate clamping
››Maximum junction temperature
Tvj=175°C
››Qualified according to JEDEC standards
CE(sat)
2
Main benefits
1
VGE
VCE
3
PD
t
1. Soft current fall characteristic with no tail current
2. Symmetrical, low voltage overshoot
3. G
ate voltage under control (no oscillation). No risk of
unwanted turn-on of device and no need for gate clamping
*IKW40N65ES5 measured on in-house welding test bench with RG=33 Ω,
total loop parasitic inductance LƠ=90 nH, IC=33 A.
IC at 10 A/div, VCE at 100 V/div, VGE at 5 V/div, PD (Eoff)=2 kW/div, t=20 ns/div
www.infineon.com/trenchstop5-s5
Main features
clamping circuits not required
››V
››Suitable for use with single turn-on /
CE(peak)
turn-off gate resistor
››No need for gate clamping
components
››Gate drivers with Miller clamping
not required
››Reduction in the EMI filtering needed
››Excellent for paralleling
Product Brief
The new TRENCHSTOP™ 5 S5 IGBT
High speed, soft switching IGBT with full rated current diode
Single turn-on / turn-off gate resistor. Seriously? You bet!
The figures below show the advantage of taking a single gate resistor with the TRENCHSTOP™ 5 S5, when compared to the TRENCHSTOP™ 5 H5.
VCE(max) [V] vs. RG [Ω]
650
630
610
590
570
550
530
510
490
470
450
Eoff [µJ] vs. RG [Ω]
Eon [µJ] vs. RG [Ω]
2500
2000
1500
1000
500
0
20
4.7 Ω
40
27 Ω
60
IKW40N65H5
80
100
0
0
4.7 Ω
IKW40N65ES5
Portfolio
VCE(sat)
[V]
IC @ 100°C
[A]
27 Ω
40
60
IKW40N65H5
S5 → RG = 4.7 Ω at 80% VBRces
H5 → RG = 27 Ω at 80% VBRces
Product
part number
20
80
100
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
4.7 Ω
IKW40N65ES5
20
27 Ω
40
60
IKW40N65H5
80
100
IKW40N65ES5
S5 → Eoff = 1.2 mJ
H5 → Eoff = 1.3 mJ
S5 → Eon =1.6 mJ
H5 → Eon =2.75 mJ
Lower RG value possible
compared to TRENCHSTOP™ 5 H5,
the TRENCHSTOP™ 5 S5 has:
››8% lower Eoff
››18% lower VCE(sat)
When using single gate resistor,
compared to TRENCHSTOP™ 5 H5,
the TRENCHSTOP™ 5 S5 has:
››42% lower Eon
››18% lower VCE(sat)
Eon
[mJ]
Eoff
[mJ]
QG
[nC]
IF @ 100°C
[A]
Qrr
[µC]
IKW30N65ES5
39.5
1.35
0.56
0.32
70
39.5
0.83
IKW40N65ES5
50
1.35
0.86
0.4
95
50
1.1
IKW50N65ES5
60.5
1.35
1.23
0.55
120
60.5
1.25
IKW75N65ES5
80
1.42
2.40
0.95
164
80
1.8
Specification details
Testing conditions:
VCE(sat): typ. values, 25°C, VGE=15 V, IC=IC(nom)
Eon and Eoff: typ. values, 25°C, VCC = 400 V, IC = IC(nom), VGE = 0/15 V, RG = RG(nom), LƠ = 30 nH, CƠ = 30 pF
QG: typ. values, 25°C, VCC = 520 V, VGE = 15 V, IC = IC(nom)
Qrr: typ. values, 25°C, VCC = 400 V, IF = IF(nom), diF/dt = -1.2 kA/µs for the 30 A and 50 A, = -0.8 kA/µs for the 40 A, = -1.5 A/ns for the 75 A
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2016 Infineon Technologies AG.
All Rights Reserved.
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Order Number: B114-I0181-V2-7600-EU-EC-P
Date: 4 / 2016
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