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KSMB27P6
KERSMI ELECTRONIC CO.,LTD.
-60V P-channel MOSFET
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
-60V
1)
2)
3)
4)
RDSON
ID
0.07Ω
-27A
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
TO-263
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-60
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-27
Continuous Drain Current-T=100℃
-19.1
Pulsed Drain Current2
-108
EAS
Single Pulse Avalanche Energy3
560
PD
Power Dissipation4
120
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+175
℃
Ratings
Units
ID
A
mJ
W
Thermal Characteristics
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
1.25
RƟJA
Thermal Resistance, Junction to Ambient1
62.5
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℃/W
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KSMB27P6
KERSMI ELECTRONIC CO.,LTD.
-60V P-channel MOSFET
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMB27P06
KSMB27P06
TO-263
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-60
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-2.0
—
-4.0
V
VDS=10V,ID=6A
—
0.055
0.07
VDS=2.5V,ID=5A
—
—
—
VDS=5V,ID=12A
—
12.4
—
—
1100
1400
—
510
660
—
120
155
—
18
45
—
185
380
—
30
70
—
90
190
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
--S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
—
33
43
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
6.8
—
Gate-Drain “Miller” Charge
ID=6A
—
18
—
ns
ns
ns
ns
nC
nC
nC
—
—
-4.0
V
—
105
—
ns
—
0.41
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
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KSMB27P6
KERSMI ELECTRONIC CO.,LTD.
-60V P-channel MOSFET
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
unless otherwise noted
Fig. 1 Typical Output Characteristics,
TC = 25 °
Fig. 2 Typical Transfer Characteristics
Fig. 3 Typical Output Characteristics,
TC = 150 °C
Fig. 4 - Normalized On-Resistance vs.
Temperature
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KSMB27P6
KERSMI ELECTRONIC CO.,LTD.
-60V P-channel MOSFET
Fig. 5 - Typical Capacitance vs.
Drain-to-Source Voltage
Fig. 6 - Typical Source-Drain
Diode Forward Voltage
Fig. 7 - Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 8 - Maximum Safe
Operating Area
Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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