KSMB17P06 KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS -60V 1) 2) 3) 4) RDSON ID 0.12Ω -17A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-263 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -17 Continuous Drain Current-T=100℃ -12 Pulsed Drain Current2 -68 EAS Single Pulse Avalanche Energy3 300 PD Power Dissipation4 79 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Ratings Units ID A mJ W Thermal Characteristics Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 1.9 RƟJA Thermal Resistance, Junction to Ambient1 62.5 www.kersemi.com ℃/W 1 KSMB17P06 KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KSMB17P06 KSMB17P06 TO-263 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -60 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -2.0 — -4.0 V VDS=10V,ID=6A — 0.094 0.12 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 9.3 — — 690 900 — 325 420 — 80 105 — 13 35 — 100 210 — 22 55 — 60 130 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics — 21 27 Gate-SourceCharge VGS=4.5V, VDS=20V, — 4.2 — Gate-Drain “Miller” Charge ID=6A — 10 — ns ns ns ns nC nC nC — — -4.0 V — 92 — ns — 0.32 — nC td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. www.kersemi.com 2 KSMB17P06 KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted Fig. 1 Typical Output Characteristics, TC = 25 ° Fig. 2 Typical Transfer Characteristics Fig. 3 Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 KSMB17P06 KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Source-Drain Diode Forward Voltage Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4