UNISONIC TECHNOLOGIES CO., LTD
UTT95N03-H
Power MOSFET
95A 30V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC UTT95N03-H is an N-channel enhancement mode
power MOSFET, it uses UTC’s advanced technology to provide the
customers with a minimum on state resistance and fast switching,
etc.
The UTC UTT95N03-H is suitable for low voltage applications
such as DC/DC converters.
FEATURES
* RDS(ON) < 4 mΩ @ VGS=10V, ID=40A
RDS(ON) < 6 mΩ @ VGS=4.5V, ID=30A
* Fast switching characteristic
* Low on-resistance
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTT95N03L-TN3-R
UTT95N03G-TN3-R
TO-252
UTT95N03G-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
1
G
S
Pin Assignment
2 3 4 5 6 7
D S - - - S S G D D D
8
D
Packing
Tape Reel
Tape Reel
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UTT95N03-H
Power MOSFET
MARKING
TO-252
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DFN-8(5×6)
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Power MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current VGS @ 10V
TC=25°C
ID
95
A
(Note 4)
Pulsed Drain Current (Note 1)
IDM
300
A
TC=25°C
50
W
Total Power Dissipation
PD
TA=25°C
2
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
TO-252
Junction to Ambient
θJA
DFN-8(5×6)
TO-252
Junction to Case
θJC
DFN-8(5×6)
2
Note: Surface mounted on 1 in copper pad of FR4 board.
RATINGS
62.5
40.3
2.5
6
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Drain-Source Leakage Current
IDSS
Forward
Gate-Source Leakage Current
IGSS
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Static Drain-Source On-State Resistance
RDS(ON)
(Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
Gate to Source Charge
QGS
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
Rise Time
tR
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE-DRAIN BODY DIODE CHARACTERISTICS
Forward On Voltage (Note 2)
VSD
Reverse Recovery Time (Note 2)
trr
Reverse Recovery Charge
Qrr
Notes: 1. Pulse width limited by max. junction temperature.
2. Pulse test.
3. Package limitation current is 75A.
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TEST CONDITIONS
MIN TYP MAX UNIT
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
30
VDS=VGS, ID=250µA
VGS=10V, ID=40A
VGS=4.5V, ID=30A
1
VGS=0V, VDS=25V, f=1.0MHz
f=1.0MHz
VGS=10V, VDS=30V, ID=1A
RG=100kΩ
VGS=10V, VDS=30V, ID=1A,
RG=25Ω
IS=40A,VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
10
+100
-100
V
µA
nA
nA
3
4
6
V
mΩ
mΩ
1300 4320
255
225
1.2
pF
pF
pF
Ω
180
7
13
40
120
800
430
nC
nC
nC
ns
ns
ns
ns
1.2
35
35
V
ns
nC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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Power MOSFET
TYPICAL CHARACTERISTICS
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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