Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N65K-MTQ
Power MOSFET
7A, 650V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 7N65K-MTQ is a high voltage power MOSFET
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used in
high speed switching applications of switching power supplies and
adaptors.

FEATURES
* RDS(ON) < 1.6 Ω @ VGS = 10 V, ID = 3.5 A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
7N65KL-TA3-T
7N65KG-TA3-T
TO-220
7N65KL-TF3-T
7N65KG-TF3-T
TO-220F
7N65KL-TF1-T
7N65KG-TF1-T
TO-220F1
7N65KL-TF2-T
7N65KG-TF2-T
TO-220F2
7N65KL-TF3T-T
7N65KG-TF3T-T
TO-220F3
7N65KL-TM3-T
7N65KG-TM3-T
TO-251
7N65KL-TN3-R
7N65KG-TN3-R
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R205-020.E
7N65K-MTQ

Power MOSFET
MARKING
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7N65K-MTQ
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7
A
Continuous Drain Current
ID
7
A
Pulsed Drain Current (Note 2)
IDM
24
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
350
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
125
W
TO-220F/TO-220F1
40
W
TO-220F3
Power Dissipation
PD
TO-220F2
42
W
TO-251/TO-252
55
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14.28mH, IAS = 7A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 7A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-251/TO-252
SYMBOL
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θJA
RATING
62.5
UNIT
°C/W
110
1.0
θJC
3.2
°C/W
2.97
2.27
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
V
VDS = 650V, VGS = 0V
10
μA
Forward
VGS = 30V, VDS = 0V
100 nA
Gate- Source Leakage Current
IGSS
-100 nA
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.5A
1.6
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
875 1000 pF
VDS=25V, VGS=0V,
Output Capacitance
COSS
88 120 pF
f=1.0 MHz
8
25
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
50
60
ns
VDD=30V, ID =0.5A,
Turn-On Rise Time
tR
65
80
ns
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
110 130 ns
Turn-Off Fall Time
tF
55
70
ns
Total Gate Charge
QG
22.5 40 nC
VDS=50V, ID=1.3A,
Gate-Source Charge
QGS
7.5
nC
VGS=10V (Note 1, 2)
5
nC
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 7 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
7
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
28
A
Forward Current
Body Diode Reverse Recovery Time
trr
320
ns
IS=7A, di/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
2.4
nC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Drain Current,ID (µA)
Drain Current,ID (µA)
Drain Current, ID (A)
Drain-Source Diode Forword Current, ISD (A)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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