UNISONIC TECHNOLOGIES CO., LTD UT3006 Power MOSFET 55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT3006 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), cost-effectiveness and high switching speed. This UTC UT3006 is suitable for DC/DC converters, etc. FEATURES * RDS(ON)<9mΩ @ VGS=10V, ID=30A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UT3006L-TN3-R UT3006G-TN3-R TO-252 UT3006G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source 1 G S 2 D S Pin Assignment 3 4 5 6 7 S S G D D D 8 D Packing Tape Reel Tape Reel MARKING TO-252 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd DFN-8(5×6) 1 of 4 QW-R502-636.C UT3006 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous VGS@10V Drain Current RATINGS UNIT 30 V ±20 V TC=25°C 55 A ID 39 A TC=100°C 160 A Pulsed (Note 2) IDM TO-252 41 W Power Dissipation (TC=25°C) PD DFN-8(5×6) 21 Junction Temperature TJ +175 °C Storage Temperature TSTG -55~+175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse test. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL TO-252 DFN-8(5×6) TO-252 DFN-8(5×6) θJA θJC RATINGS 110 46 3 6 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS MIN TYP MAX UNIT ID=250µA, VGS=0V VDS=30V, VGS=0V VDS=0V, VGS=+20V VDS=0V, VGS=-20V 30 VDS=VGS, ID=250µA VGS=10V, ID=30A VGS=4.5V, ID=20A VDS=10V, ID=30A 1 Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note) QG VGS=4.5V, VDS=24V, ID=30A Gate to Source Charge QGS Gate to Drain Charge QGD Gate Resistance RG f=1.0MHz Turn-ON Delay Time (Note) tD(ON) VDS=15V, ID=30A, RG=3.3Ω, Rise Time tR VGS=10V, RD=0.5 Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS=30A, VGS=0V Body Diode Reverse Recovery Time (Note) trr IS=10A, VGS=0V, dI/dt=100A/µs Body Diode Reverse Recovery Charge QRR V 10 µA +100 nA -100 nA 3 9 16 42 V mΩ mΩ S 700 1120 215 155 pF pF pF 13 2.5 9.5 1.9 8 85 20.5 10 21 nC nC nC Ω ns ns ns ns 1.2 V ns µC 23 14 Note: Pulse test. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-636.C UT3006 Power MOSFET TEST CIRCUITS AND WAVEFORMS VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Switching Time Waveform UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Q Gate Charge Waveform 3 of 4 QW-R502-636.C UT3006 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-636.C