Si2333CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform." R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 10.9594 N/A 15.4459 RT2 58.3228 N/A 2.3502 RT3 32.8979 N/A 7.5331 RT4 63.8199 N/A 24.6708 Junction to Ambient Case Foot CT1 529.2633 u N/A 13.2342 m 218.6055 u Thermal Capacitance (Joules/°C) CT2 3.2494 m N/A CT3 50.8575 m N/A 3.5873 m CT4 1.3936 N/A 31.1868 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 68753 Revision: 05-Jun-08 www.vishay.com 1 Si2333CDS_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 7.6877 N/A 2.9021 RF2 47.0853 N/A 11.6804 RF3 46.4192 N/A 26.4370 RF4 64.8078 N/A 8.9805 Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 274.9646 u N/A 222.4866 u CF2 1.6267 m N/A 2.3227 m CF3 13.5715 m N/A 7.8296 m CF4 1.2769 N/A 98.6038 m Note NA indicates not applicable www.vishay.com 2 Document Number: 68753 Revision: 05-Jun-08 Si2333CDS_RC Vishay Siliconix Document Number: 68753 Revision: 05-Jun-08 www.vishay.com 3