SiB417EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform." R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 13.1347 1.4063 N/A RT2 48.9391 7.6202 N/A RT3 27.7389 42.3000 m N/A RT4 15.1873 431.2000 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 226.1399 u 65.6424 u N/A CT2 1.7894 105.7480 u N/A CT3 4.2299 m 19.2457 m N/A CT4 298.1358 m 18.5333 m N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 68782 Revision: 10-Jun-08 www.vishay.com 1 SiB417EDK_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 13.2327 4.4570 N/A RF2 27.3333 4.0136 N/A RF3 18.1230 823.3409 m N/A RF4 46.3110 206.0591 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 186.7750 u 42.7031 u N/A CF2 3.4356 m 142.7275 u N/A CF3 189.8478 m 561.3551 u N/A CF4 1.6113 26.8961 m N/A Note NA indicates not applicable www.vishay.com 2 Document Number: 68782 Revision: 10-Jun-08 SiB417EDK_RC Vishay Siliconix Document Number: 68782 Revision: 10-Jun-08 www.vishay.com 3