SiB417EDK_RC

SiB417EDK_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have been
derived using curve-fitting techniques. R-C values for the
electrical circuit in the Foster/Tank and Cauer/Filter
configurations are included. When implemented in P-Spice,
these values have matching characteristic curves to the
single-pulse transient thermal impedance curves for the
MOSFET.
These RC values can be used in the P-SPICE simulation to
evaluate the thermal behavior of the MOSFET junction
temperature under a defined power profile. These
techniques are described in Application Note AN609,
"Thermal Simulation of Power MOSFETs on the P-Spice
Platform."
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RT1
13.1347
1.4063
N/A
RT2
48.9391
7.6202
N/A
RT3
27.7389
42.3000 m
N/A
RT4
15.1873
431.2000 m
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
Foot
CT1
226.1399 u
65.6424 u
N/A
CT2
1.7894
105.7480 u
N/A
CT3
4.2299 m
19.2457 m
N/A
CT4
298.1358 m
18.5333 m
N/A
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to
the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 68782
Revision: 10-Jun-08
www.vishay.com
1
SiB417EDK_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient
Case
Foot
RF1
13.2327
4.4570
N/A
RF2
27.3333
4.0136
N/A
RF3
18.1230
823.3409 m
N/A
RF4
46.3110
206.0591 m
N/A
Thermal Capacitance (Joules/°C)
Junction to
Ambient
Case
Foot
CF1
186.7750 u
42.7031 u
N/A
CF2
3.4356 m
142.7275 u
N/A
CF3
189.8478 m
561.3551 u
N/A
CF4
1.6113
26.8961 m
N/A
Note
NA indicates not applicable
www.vishay.com
2
Document Number: 68782
Revision: 10-Jun-08
SiB417EDK_RC
Vishay Siliconix
Document Number: 68782
Revision: 10-Jun-08
www.vishay.com
3