SiR496DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice, these values have matching characteristic curves to the single-pulse transient thermal impedance curves for the MOSFET. These RC values can be used in the P-SPICE simulation to evaluate the thermal behavior of the MOSFET junction temperature under a defined power profile. These techniques are described in Application Note AN609, "Thermal Simulation of Power MOSFETs on the P-Spice Platform." R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RT1 3.8245 640.8249 m N/A RT2 3.0693 1.7141 N/A RT3 14.1238 720.6751 m N/A RT4 48.9824 1.4244 N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CT1 22.2352 m 67.6363 m N/A CT2 3.0325 m 81.8977 m N/A CT3 102.3331 m 1.1101 m N/A CT4 1.2376 28.0503 m N/A This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 68915 Revision: 13-Aug-08 www.vishay.com 1 SiR496DP_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Foot RF1 5.2807 563.9859 m N/A RF2 15.2469 322.2296 m N/A RF3 18.0295 2.7153 N/A RF4 31.4429 898.4845 m N/A Thermal Capacitance (Joules/°C) Junction to Ambient Case Foot CF1 3.8026 m 994.7712 u N/A CF2 58.7565 m 1.5144 m N/A CF3 743.1440 m 13.7262 m N/A CF4 1.0644 138.7369 m N/A Note NA indicates not applicable www.vishay.com 2 Document Number: 68915 Revision: 13-Aug-08 SiR496DP_RC Vishay Siliconix Document Number: 68915 Revision: 13-Aug-08 www.vishay.com 3