Photomicrosensor (Reflective) EE-SY113 Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Compact reflective Photomicrosensor (EE-SY110) with a molded housing and a dust-tight cover. • Recommended sensing distance = 4.4 mm Four, 0.5 ■ Absolute Maximum Ratings (Ta = 25°C) Item Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Notch for directional discrimination 2.5 Detector Four, 0.25 15 to 18 Ambient temperature Internal Circuit A C K E Terminal No. Name A Anode K C Cathode Collector E Unless otherwise specified, the tolerances are as shown below. Emitter Dimensions ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Operating Topr –40°C to 80°C Storage Tstg –40°C to 85°C Tsol 260°C (see note 3) Soldering temperature Tolerance 3 mm max. Rated value Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 160 μA min., 1,600 μA max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 4.4 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflection --- --- λP 850 nm typ. VCE = 10 V Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Emitter Detector Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 166 EE-SY113 Photomicrosensor (Reflective) IF = 30 mA ■ Engineering Data VCE = 10 V d = 4.4 mm Dark Current vs. Ambient Temperature Characteristics (Typical) Ambient temperature Ta (°C) Ta = 25°C IF = 20 mA VCE = 10 V Light current IL (μA) Sensing object: White paper with a reflection factor of 90% Distance d (mm) Sensing Position Characteristics (Typical) Relative light current IL (%) Sensing Distance Characteristics (Typical) IF = 20 mA VCE = 10 V Ta = 25°C d1 = 4.4 mm Sensing object: White paper with a reflection factor of 90% d1 d2 Direction Distance d2 (mm) IF = 30 mA IF = 20 mA IF = 10 mA Vcc = 5 V Ta = 25°C Load resistance RL (kΩ) Sensing Angle Characteristics (Typical) Relative light current IL (%) Ambient temperature Ta (°C) IF = 40 mA Response Time vs. Load Resistance Characteristics (Typical) Response time tr, tf (μs) VCE = 10 V 0x Dark current ID (nA) Relative light current IL (%) IF = 20 mA VCE = 5 V d = 4.4 mm Sensing object: White paper with a reflection factor of 90% Collector−Emitter voltage VCE (V) Forward current IF (mA) Ambient temperature Ta (°C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Sensing object: White paper with a reflection factor of 90% Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) Light current IL (μA) Forward current IF (mA) Collector dissipation Pc (mW) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25°C VCE = 10 V IF = 20 mA d = 4.4 mm Sensing object: White paper with a reflection factor of 90% Angle deviation θ (°) Response Time Measurement Circuit Input Output 90 % 10 % Input Output EE-SY113 Photomicrosensor (Reflective) 167