EE-SY110/113/171 Compact Reflective Phototransistor Output Low-profiled model with an overall height of only 3 mm (EE-SY171) Models with a circuit integrated into molded housing provide special cost advantages (EE-SY110/113) Model with a filter reduces effects of external visible light (EE-SY113) Ordering Information Appearance Sensing method Sensing Sensing object distance Reflective 3.5 mm White paper with reflection factor of 90% Output configuration Weight Phototransistor 0.3 g Part number EE-SY171 4.4 mm Approx. 0.5 g EE-SY113 5 mm Approx. 0.4 g EE-SY110 Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Item Input Output Ambient temperature Symbol Rated value Forward current IF 50 mA* Pulse forward current IFP 1 A** Reverse voltage VR 4V Collector-emitter voltage VCEO 30 V Collector current IC 20 mA Collector dissipation PC 100 mW* Operating Topr -40°C to 85°C (-40°F to 185°F) Storage Tstg -40°C to 85°C (-40°F to 185°F) *Refer to Engineering Data if the ambient temperature is not within the normal room temperature range. **This value was measured with a pulse width of 10 µs and a repeating frequency of 100 Hz. EE-SY110/113/171 EE-SY110/113/171 CHARACTERISTICS (TA = 25°C) Item Symbol Emitter Receiver Combination EE-SY110 EE-SY171 EE-SY113 Value Condition Value Condition Value Condition Forward voltage VF 1.5 V max. IF = 30 mA 1.5 V max. IF = 30 mA 1.5 V max. IF = 30 mA Reverse current IR 10 µA max. VR = 4 V 10 µA max. VR = 4 V 10 µA max. VR = 4 V Peak emission wavelength λp(L) 940 nm typ. IF = 20 mA 940 nm typ. IF = 20 mA 940 nm typ. IF = 20 mA Dark current ID 200 nA max. VCE = 10 V 0lx 200 nA max. VCE = 10 V 0lx 200 nA max. VCE = 10 V 0lx Peak spectral sensitivity wavelength λp(P) 850 nm typ. VCE = 10 V 850 nm typ. VCE = 10 V 850 nm typ. VCE = 10 V Light current IL 200 to 2,000 µA IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 5 mm 50 to 500 µA IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 3.5 mm 160 to 1,600 µA IF = 20 mA VCE = 10 V White paper with a reflection factor of 90% at a distance of 4.4 mm Leakage current ILEAK 2 µA max. IF = 20 mA VCE = 10 V* 200 nA max. IF = 20 mA VCE = 10 V* 2 µA max. IF = 20 mA VCE = 10 V* Rising time** tr 30 µs typ. 30 µs typ. tf 30 µs typ. VCC = 5 V RL = 1 kΩ IL = 1 mA 30 µs typ. Falling time** VCC = 5 V RL = 1 kΩ IL = 1 mA VCC = 5 V RL = 1 kΩ IL = 1 mA 30 µs typ. 30 µs typ. *The sensing object reflects no light. **The following illustrations show the rising time, tr, and the falling time, tf. Sensing object Input 0 t 90% 10% Output 0 tr VCC Input t Output tf RL Engineering Data Note: The operating conditions of the photomicrosensor must be within the absolute maximum rating ranges. INPUT CHARACTERISTICS (TYPICAL) Forward current I F (mA) IF, Pc Collector dissipation PC (mW) Forward current I F (mA) TEMPERATURE CHARACTERISTICS TA = --30 °C TA = +25 °C TA = +70 °C Ambient temperature TA (°C) Forward voltage VF (V) EE-SY110/113/171 EE-SY110/113/171 INPUT/OUTPUT CHARACTERISTICS (TYPICAL) EE-SY171 Light current I L ( µ A) VCE = 10 V Sensing object: White paper with a reflection factor of 90% Sensing distance: 5 mm Light current I L ( µ A) EE-SY110 TA = 25 °C VCE = 10 V Sensing object: Paper with a reflection factor of 90% Sensing distance: 5 mm Forward current IF (mA) Forward current IF (mA) OUTPUT CHARACTERISTICS (TYPICAL) EE-SY171 EE-SY110 IF = 30 mA IF = 20 mA IF = 10 mA Light current I L ( µ A) Light current I L (mA) IF = 40 mA TA = 25 °C Sensing object: Paper with a reflection factor of 90% Sensing distance: 3.5 mm IF = 40 mA IF = 30 mA IF = 20 mA IF =10 mA White paper (reflection factor: 90%) Sensing distance:5 mm Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) LIGHT CURRENT TEMPERATURE DEPENDENCY (TYPICAL) EE-SY171 Sensing object: White paper with a reflection factor of 90% Based on the IL value at 25 °C as 100%. IF = 20 mA VCE = 10 V Sending distance: 5 mm Ambient temperature TA (°C) Sensing object: Paper with a reflection factor of 90% Relative light current IL (%) Relative light current IL (%) EE-SY110/113 IF = 20 mA VCE = 10 V Sending distance: 3.5 mm Ambient temperature TA (°C) EE-SY110/113/171 EE-SY110/113/171 LEAKAGE CURRENT SENSING DISTANCE EE-SY171 EE-SY110 CHARACTERISTICS 1 (TYPICAL) TA = 25 °C VCE = 10 V Sensing object: Object with no light reflection Sensing distance: Infinite Light current I L ( µ A) Current leakage I LEAK (nA) CHARACTERISTICS (TYPICAL) TA = 25 °C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% (a) (b) (c) (a): 15 x 15 mm2 (b): 10 x 10 mm2 (c): 5 x 5 mm2 (d): 2 x 2 mm2 (d) Distance d (mm) Forward current IF (mA) SENSING DISTANCE SENSING DISTANCE EE-SY171 EE-SY171 CHARACTERISTICS 2 (TYPICAL) CHARACTERISTICS (TYPICAL) TA = 25 °C IF = 20 mA VCE = 10 V (b) (c) (d) a: Aluminum b: White paper with a reflection factor of 90% (e) c: Pink paper d: OHP e: Tracing paper f: Black sponge Light current I L ( µ A) Light current I L ( µ A) (a) TA = 25 °C IF = 20 mA VCE = 10 V Paper with a reflection factor of 90% Tracing paper OHP sheet Black paper (f) Distance d (mm) EE-SY110 Distance d (mm) EE-SY171 TA = 25 °C IF = 20 mA VCE = 10 V d1 = 3 mm d1 = 5 mm d1 d2 Distance d2 (mm) Moving direction Relative light current IL (%) Relative light current IL (%) d TA = 25 °C IF = 20 mA VCE = 10 V Sensing object: Paper with a reflection factor of 90% d1 = 3 mm d1 = 4 mm d1 = 5 mm d2 d1 Distance d2 (mm) EE-SY110/113/171 EE-SY110/113/171 SWITCHING CHARACTERISTICS (RISE TIME, TYPICAL) EE-SY110/113 EE-SY171 RL = 4.7 kΩ d RL = 1 kΩ RL = 470 Ω RL=100 Ω IL Vcc Input Input t 0 TA = 25 °C VCE = 10 V Sensing distance: 3.5 mm RL = 1 kΩ Sensing object: Paper with a reflection factor of 90% RL = 4.7 kΩ RL = 470 Ω RL = 100 Ω 90% 10% OUT Output RL Rising time tr ( µ s) Rising time tr ( µ s) TA = 25 °C VCE = 10 V 0 tf Light current IL (µA) Light current IL (µA) SWITCHING CHARACTERISTICS (FALL TIME, TYPICAL) EE-SY110/113 EE-SY171 TA = 25 °C VCE = 10 V Sensing distance: 3.5 mm Sensing object: Paper with a reflection factor of 90% RL = 4.7 kΩ RL = 4.7 kΩ d RL = 1 kΩ RL = 470 Ω RL = 100 Ω IL Vcc Input Input 0 t Falling time tf (µ s) Falling time tf (µ s) TA = 25 °C VCE = 10 V RL = 1 kΩ RL = 470 Ω RL = 100 Ω OUT Output 90% 0 tr 10% t Light current IL (µA) Light current IL (µA) SENSING ANGLE CHARACTERISTICS (TYPICAL) EE-SY171 VCE = 10 V IF = 20 mA Sensing distance: 5 mm Sensing object: White paper with a reflection factor of 90% −θ 0 +θ d Angle deviation Θ (°) Relative light current IL (%) Relative light current IL (%) EE-SY110 TA = 2 5 °C IF = 20 mA VCE = 10 V Sensing distance: 5 mm −θ 0 +θ d Sensing object: Paper with a reflection factor of 90% Angle deviation Θ (°) EE-SY110/113/171 EE-SY110/113/171 Dimensions Unit: mm (inch) EE-SY171 Two, 1.2 dia. Two, 2 dia. 14 3 Anode mark E A C K Internal Circuit (All Models) 4.2 2.5 C K E Four, 0.5 15 3 A 1 Terminal No. A K C E 5.5 0° to 30° Four, 0.25 EE-SY113 12 0.7 C K 6.2 Four, 0.5 2.5 A E 15.2 6 2.4 15 to 18 EE-SY110 12 4.5 0.6 A E Four, 0.5 4.6 2.5 C K 2.5 Four, R1.5 15.2±0.2 0.6 1.9 4.8 0.5 3 Four, 0.25 +0 Θ 8 --0.2 15 to 18 Θ Θ = 0 to 13° Name Anode Cathode Collector Emitter EE-SY110/113/171 EE-SY110/113/171 Precautions Refer to the Technical Information Section for general precautions. NOTE: DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters to inches divide by 25.4. OMRON ELECTRONICS, INC. OMRON CANADA, INC. One East Commerce Drive Schaumburg, IL 60173 885 Milner Avenue Scarborough, Ontario M1B 5V8 1-800-55-OMRON 416-286-6465 Cat. No. EO5DAX4 1/99 Specifications subject to change without notice. Printed in U.S.A.