Photomicrosensor (Reflective) EE-SY201 ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • The LED requires a forward current of only 5 mA due to the PhotoDarlington transistor built into the detector. • With a red LED light source. ■ Absolute Maximum Ratings (Ta = 25°C) Four, 0.125 Item Emitter Two. 0.5 Optical axis Two. 0.7 Ambient temperature Internal Circuit A C K E A K C E Unless otherwise specified, the tolerances are as shown below. Name Anode Cathode Collector Emitter Dimensions 15 mA (see note 1) Pulse forward current IFP --- 3 mm max. ±0.3 3 < mm ≤ 6 6 < mm ≤ 10 ±0.375 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Reverse voltage VR 4V Collector–Emitter voltage VCEO 24 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 50 mW (see note 1) Operating Topr –20°C to 60°C Storage Tstg –20°C to 80°C Tsol 260°C (see note 2) Soldering temperature Tolerance Rated value IF Two, 1 dia. Detector Terminal No. Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition VF 2.0 V typ., 2.6 V max. IF = 15 mA Reverse current IR 0.01 m A typ., 5 m A max. VR = 4 V Peak emission wavelength lP 700 nm typ. IF = 10 mA Light current IL 0.3 m A min., 8.0 m A max. IF = 5 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current ID 2 nA typ., 250 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- --- --- lP 750 nm typ. VCE = 10 V Rising time tr 180 m s typ. VCC = 5 V, RL = 100 W, IL = 1 mA Falling time tf 60 m s typ. VCC = 5 V, RL = 100 W, IL = 1 mA Detector Forward voltage Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. EE-SY201 Photomicrosensor (Reflective) 241 ■ Engineering Data Dark Current ID (nA) Ambient temperature Ta (°C) Ta = 25°C IF = 5 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% IF = 7 mA IF = 5 mA IF = 3 mA (a) : d1 = 3 mm (b) : d1 = 4 mm (c) : d1 = 6 mm Sensing object: White paper with a reflection factor of 90% 90 % 10 % Input Output EE-SY201 Photomicrosensor (Reflective) VCC = 5 V Ta = 25°C Sensing Angle Characteristics (Typical) IF = 5 mA VCE = 10 V Ta = 25°C Input 242 Light current IL (mA) Sensing Position Characteristics (Typical) Response Time Measurement Circuit Output IF = 10 mA Load resistance RL (kΩ) Ambient temperature Ta (°C) Distance d2 (mm) Distance d (mm) IF = 15 mA Collector-Emitter voltage VCE (V) VCE = 10 V 0lx Relative light current IL (%) Sensing Distance Characteristics (Typical) Ta = 25°C d = 4 mm Sensing object: White paper with a reflection factor of 90% Response Time vs. Load Resistance Characteristics (Typical) Response time tr, tf (µs) Relative light current IL (%) Forward current IF (mA) Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 5 mA VCE = 5 V d = 4 mm Sensing object: White paper with a reflection factor of 90% Light current IL (µA) Ta = 25°C VCE = 10 V d = 4 mm Sensing object: White paper with a reflection factor of 90% IF = 1 mA Ambient temperature Ta (°C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Relative light current IL (%) Forward current IF (mA) Light current IL (mA) Light Current vs. Forward Current Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Ta = 25°C VCE = 10 V IF = 5 mA d = 4 mm Sensing object: White paper with a reflection factor of 90% Angle deviation θ (°)