Photomicrosensor (Reflective) EE-SY169B Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • High-quality model with plastic lenses. • Highly precise sensing range with a tolerance of ±0.6 mm horizontally and vertically. • With a red LED sensing dyestuff-type links. • Limited reflective model • Higher gain than EE-SY169. • Possible to get the same IL as EE-SY169 with IF=10 mA. (half of EE-SY169 condition) • Recommended sensing distance = 4.0 mm 3.2 0.5 6±0.3 2.5 1.8 12.5±0.3 8±0.3 ■ Absolute Maximum Ratings (Ta = 25°C) Surface A 1 3±0.5 1± 0.1 dia. 3±0.5 1 Item Two, C0.2 1±0.1 dia. Emitter (see note) 4.8 (see note) 9.2±0.5 3.2 7±0.1 A C K E 0.5 Detector 3 2.5 Internal Circuit A C K E Note: These dimensions are for the surface A. Other lead wire pitch dimensions are for the housing surface. Unless otherwise specified, the tolerances are as shown below. Dimensions Terminal No. A K C E Ambient temperature Symbol IF 40 mA (see note 1) Pulse forward current IFP 300 mA (see note 2) Reverse voltage VR 3V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr 0°C to 70°C Storage Tstg –20°C to 80°C Tsol 260°C (see note 3) Soldering temperature Tolerance Name 3 mm max. ±0.3 Anode Cathode Collector Emitter 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.85 V typ., 2.3 V max. IF = 20 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 3 V Peak emission wavelength λP 660 nm typ. IF = 20 mA Light current IL 160 μA min., 2,000 μA max. IF = 10 mA, VCE = 5 V White paper with a reflection ratio of 90%, d = 4 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 5 V, 0 lx Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 5 V with no reflection --- --- λP 850 nm typ. VCE = 5 V Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Detector Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 164 EE-SY169B Photomicrosensor (Reflective) ■ Engineering Data Forward Current vs. Collector Dissipation Temperature Rating 100 IF 40 80 30 60 20 40 10 20 −20 0 20 40 60 1,000 800 600 400 200 0 0 100 80 10 0 90 80 70 60 80 100 Ambient temperature Ta (°C) 200 100 3 4 5 6 7 8 9 0.01 0.001 −30 −20 −10 0 100 140 120 100 80 60 40 20 0 −30 −20 −10 0 10 Angle deviation θ (°) 20 30 tr 0.1 IF = 10 mA VCE = 5 V Ta = 25°C d1 = 4 mm 100 d2 40 Direction d1 Sen- 20 105 10 1 Sensing Position Characteristics (Typical) 120 Sensing object: White paper with a reflection factor of 90% 60 Sensor sor Sensing object: White paper with a reflection factor of 90% 80 Sensing d = 0 object 60 d2 Direction 40 d1 Sensor 20 0 1 Relative light current IL (%) Relative light current IL (%) d 25 Load resistance RL (kΩ) d1 = 3.5 mm d1 = 4.0 mm d1 = 4.5 mm 80 110 180 20 10 1 0.01 2 3 4 5 6 5 6 Sensing object: White paper with a reflection factor of 90% Ta = 25° IF = 10 mA VCE = 10 V 8 9 10 11 12 13 Response Time Measurement Circuit Input d 0 t 90 % 10 % Output d = 3 mm d = 4 mm d = 5 mm 100 7 Distance d2 (mm) Sensing Angle Characteristics (Typical) 200 15 tf 10 20 30 40 50 60 70 80 90 IF = 10 mA VCE = 5 V Ta = 25°C 10 d = 3 mm Ta = 25°C d = 4 mm IF = 10 mA d = 5 mm VCE = 10 V 10 100 Distance d2 (mm) 160 5 0 1,000 Sensing Position Characteristics (Typical) Sensing Angle Characteristics (Typical) 220 IF = 2.5 mA Vcc = 5 V Ta = 25°C 0.1 Distance d (mm) 240 0 Response Time vs. Load Resistance Characteristics (Typical) 0 2 IF = 5 mA Collector−Emitter voltage VCE (V) 1 0 1 400 60 10 Relative light current IL (%) Light current IL (μA) 300 0 IF = 10 mA 600 10,000 120 Sensing object: White paper with a reflection factor of 90% 400 800 Ambient temperature Ta (°C) Ta = 25°C IF = 20 mA VCE = 10 V 500 50 100 Sensing Distance Characteristics (Typical) 600 40 Response time tr, tf (μs) Dark Current ID (nA) Relative light current IL (%) 100 40 IF = 15 mA 1,000 VCE = 10 V 0lx 1,000 20 30 10,000 110 0 20 Dark Current vs. Ambient Temperature Characteristics (Typical) IF = 10 mA VCE = 5 V −20 1,200 Forward current IF (mA) 120 60 −40 Sensing object: White paper with a reflection factor of 90% 200 Ambient temperature Ta (°C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) IF = 20 mA Ta = 25°C d = 4 mm 1,400 Relative light current IL (%) 0 −40 1,600 d = 4 mm VCE = 5 V Light current IL (μA) 50 Light Current vs. Collector−Emitter Voltage Characteristics (Typical) 1,200 Light current IL (μA) PC Forward current IF (mA) 1,400 120 Collector dissipation Pc (mW) 60 Light Current vs. Forward Current Characteristics (Typical) 0 t tr 95 Input tf IL VCC 90 Output 85 RL 80 −20 −10 0 10 20 Angle deviation θ (°) EE-SY169B Photomicrosensor (Reflective) 165