Photomicrosensor (Reflective) EE-SF5(-B) Be sure to read Precautions on page 24. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Dust-tight construction. • With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. • Mounted with M2 screws. • Model with soldering terminals (EE-SF5). • Model with PCB terminals (EE-SF5-B). • Recommended sensing distance = 5.0 mm Matted 1.9 dia. 2.2±0.2 dia. hole ■ Absolute Maximum Ratings (Ta = 25°C) Item Four, 1.5 Four, 0.5 7.6±1 Emitter Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 80°C Storage Tstg –30°C to 80°C Tsol 260°C (see note 3) Four, 0.25 2.54 7.62±0.3 2.54±0.2 EE-SF5 Detector EE-SF5-B Internal Circuit A E K Dimensions C Terminal No. A K C E Unless otherwise specified, the tolerances are as shown below. Name Anode Cathode Collector Emitter Ambient temperature Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 6 < mm ≤ 10 ±0.375 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 200 μA min., 2,000 μA max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflection --- --- λP 850 nm typ. VCE = 10 V Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Detector Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 172 EE-SF5(-B) Photomicrosensor (Reflective) ■ Engineering Data IF = 20 mA VCE = 5 V Light current IL (mA) Ambient temperature Ta (°C) Sensing Position Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25°C (a) : d1 = 3 mm (b) : d1 = 5 mm Sensing object: White paper with a reflection factor of 90% d1 Sensing Angle Characteristics (Typical) Sensing Angle Characteristics (Typical) Relative light current IL (%) Relative light current IL (%) Ta = 25°C IF = 20 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% d = 5 mm Angle deviation θ (°) VCC = 5 V Ta = 25°C Sensing Position Characteristics (Typical) IF = 20 mA VCE = 5 V Ta = 25°C d1 = 5 mm Sensing object: White paper with a reflection factor of 90% Phototransistor side LED side d1 = 5 mm Distance d2 (mm) Distance d2 (mm) Distance d (mm) IF = 10 mA Load resistance RL (kΩ) Relative light current IL (%) Ta = 25°C VCE = 10 V Sensing object: White paper with a reflection factor of 90% IF = 20 mA Response Time vs. Load Resistance Characteristics (Typical) VCE = 10 V 0lx Relative light current IL (%) Sensing Distance Characteristics (Typical) Ta = 25°C d = 5 mm IF = 40 mA Sensing object: White paper with a reflection factor of 90% IF = 30 mA Collector−Emitter voltage VCE (V) Dark Current ID (nA) Relative light current IL (%) Dark Current vs. Ambient Temperature Characteristics (Typical) Ambient temperature Ta (°C) Light current IL (μA) Ta = 25°C VCE = 10 V d = 5 mm Sensing object: White paper with a reflection factor of 90% Forward current IF (mA) Ambient temperature Ta (°C) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Light Current vs. Collector−Emitter Voltage Characteristics (Typical) Response time tr, tf (μs) Forward current IF (mA) Light current IL (μA) Light Current vs. Forward Current Characteristics (Typical) Collector dissipation PC (mW) Forward Current vs. Collector Dissipation Temperature Rating Response Time Measurement Circuit Input Output 90 % 10 % Input Sensing object Ta = 25°C IF = 20 mA VCE = 10 V d = 5 mm Sensing object: White paper with a reflection factor of 90% Output Angle deviation θ (°) EE-SF5(-B) Photomicrosensor (Reflective) 173