Analog Power AM30N20-400PCFM N-Channel 200-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 200 PRODUCT SUMMARY rDS(on) (mΩ) 400 @ VGS = 10V 450 @ VGS = 5.5V ID(A) 9 8.5 Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 TC=25°C ID Continuous Drain Current 9 a I 50 Pulsed Drain Current DM IS Continuous Source Current (Diode Conduction) 50 T =25°C P Power Dissipation 60 C D TJ, Tstg -55 to 175 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol Maximum RθJA 62.5 RθJC 2.5 Units V A A W °C Units °C/W Notes a. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM30N20-400PCFM-1A Analog Power Parameter AM30N20-400PCFM Symbol Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance Diode Forward Voltage gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 9 A VGS = 5.5 V, ID = 8.5 A VDS = 15 V, ID = 10 A IS = 25 A, VGS = 0 V Dynamic VDS = 100 V, VGS = 10 V, ID = 6 A VDD = 100 V, RL = 10 Ω , ID = 6 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f =1MHz Min Typ 1 Max Unit 3.5 ±10 1 25 V uA 34 uA A 400 450 20 0.95 15.8 4.2 4.4 10.8 17.6 32.2 30.2 807 81 38 mΩ S V nC nS pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. 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APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS-AM30N20-400PCFM-1A Analog Power AM30N20-400PCFM Typical Electrical Characteristics 10 TJ = 25°C 9 0.6 8 ID - Drain Current (A) RDS(on) - On-Resistance (Ω) 0.7 0.5 4.5V 0.4 5.0V 0.3 5.5V, 6V,8V,10V 0.2 7 6 5 4 3 2 0.1 1 0 0 0 5 10 ID-Drain Current (A) 0 15 2 6 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 100 0.8 TJ = 25°C 0.7 TJ = 25°C ID = 6A IS - Source Current (A) RDS(on) - On-Resistance (Ω) 4 0.6 0.5 0.4 0.3 0.2 10 1 0.1 0.1 0.01 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0 10 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 15 1200 10V,8V,6V,5.5V 12 F = 1MHz 1000 5.0V Ciss Capacitance (pf) ID - Drain Current (A) 1.5 9 4.5V 6 3 800 600 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS-AM30N20-400PCFM-1A Analog Power AM30N20-400PCFM Typical Electrical Characteristics 2.5 VDS = 100V 9 ID = 6A 8 RDS(on) - On-Resistance (Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 5 10 15 20 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAKTRANSIENT POWER (W) 200 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC DC 0.1 IDM Limit limited by RDS 0.01 0.1 1 10 100 180 160 140 120 100 80 60 40 20 0 0.001 1000 0.1 VDS Drain to Source Voltage (V) 10 1000 t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 62.5 °C /W 0.1 0.05 0.02 0.01 P(pk) Single Pulse t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS-AM30N20-400PCFM-1A Analog Power AM30N20-400PCFM Package Information © Preliminary 5 Publication Order Number: DS-AM30N20-400PCFM-1A