UNISONIC TECHNOLOGIES CO., LTD UT2305-H Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305-H is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL ORDERING INFORMATION Ordering Number Note: UT2305G-AE2-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 1 S Pin Assignment 3 2 G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R210-013.C UT2305-H Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current (Note 3) (TA=25°C) ID -4.2 A Pulsed Drain Current (Note 1, 2) IDM -10 A Power Dissipation (TA=25°C) PD 0.83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL θJA RATING 150 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN BVDSS VGS=0V, ID=-250μA VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=±10V, VDS=0V Reference to 25°C, ID=-1mA -20 IDSS Gate-Source Leakage Current IGSS Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250uA -0.4 VGS=-4.5V, ID=-2.8A Drain-Source On-State Resistance (Note 2) RDS(ON) VGS=-2.5V, ID=-2.4A VGS=-1.8V, ID=-1.7A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=-15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 2) QG VDS=-16V, VGS=-4.5V, Gate-Source Charge QGS ID=-4.2A Gate-Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=-1.2A Reverse Recovery Time trr VGS=0V, IS=-4.2A, dI/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300μs, duty cycle≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT -1 -30 ±100 V μA μA nA V/°C -0.9 75 95 120 V mΩ mΩ mΩ -0.1 58 75 95 515 55 20 pF pF pF 6.4 0.9 1.6 12 36 326 200 nC nC nC ns ns ns ns -1.2 27.7 22 V ns nC 2 of 4 QW-R210-013.C UT2305-H Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R210-013.C UT2305-H Power MOSFET TYPICAL CHARACTERISTICS (Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R210-013.C