UNISONIC TECHNOLOGIES CO., LTD UT2305A Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2305A is P-channel enhancement mode Power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT2305AL-AE3-R UT2305AG-AE3-R Package SOT-23 1 S Pin Assignment 2 3 G D Packing Tape Reel MARKING B3E L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-192.C UT2305A Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDSS - 30 V Gate-Source Voltage VGSS ± 12 V Continuous Drain Current (Note 3) (Ta=25°C) ID -4.2 A Pulsed Drain Current (Note 1, 2) IDM -10 A Total Power Dissipation (Ta=25°C) PD 1.38 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL θJA MIN TYP MAX 90 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Drain-Source On-State Resistance (Note 2) RDS(ON) TEST CONDITIONS MIN VGS=0V, ID=-250μA -30 VDS=-30V, VGS=0V VGS=±12V, VDS=0V Reference to 25°C, ID=-1mA VDS=VGS, ID=-250μA VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-3.0A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A www.unisonic.com.tw MAX UNITS -1 ±100 V μA nA V/°C -1.2 60 80 150 250 V mΩ mΩ mΩ mΩ -0.1 -0.5 DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=-15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) VDS=-15V, VGS=-10V, Turn-ON Rise Time tR ID=-4.2A, RG=6Ω, RD=3.6Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=-16V, VGS=-4.5V, Gate-Source Charge QGS ID=-4.2A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=-1.2A Reverse Recovery Time tRR VGS=0V, IS=-4.2A, dI/dt=100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300μs, duty cycle≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on min. UNISONIC TECHNOLOGIES CO., LTD TYP 740 167 126 pF pF pF 5.9 3.6 32.4 2.6 10.6 2.32 3.68 ns ns ns ns nC nC nC -1.2 27.7 22 V ns nC 2 of 4 QW-R502-192.C UT2305A Power MOSFET TYPICAL CHARACTERISTICS C (pF) Gate to Source Voltage,-VGS (V) Drain Current,-ID (A) Drain Current,-ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R502-192.C UT2305A Power MOSFET TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-192.C