Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UPD02R205L
-12A, -20V, P-CHANNEL 20V
(D-S) POWER MOSFET

1
DESCRIPTION
DFN-8(5x6)
The UTC UPD02R205L is a P-channel MOSFET, it uses
UTC’s advanced technology to provide the customers with a
minimum on state resistance, etc.
The UTC UPD02R205L is suitable for DC/DC converter,
load switch and charger switch for portable devices.

Power MOSFET
1
FEATURES
DFN-8(3x3)
* RDS(ON) <20.5 mΩ @ VGS=-4.5V, ID=-6A
RDS(ON) <27 mΩ @ VGS=-2.5V, ID=-2A
RDS(ON) <36 mΩ @ VGS=-1.8V, ID=-2A
RDS(ON) <60 mΩ @ VGS=-1.5V, ID=-1A
* Low RDS(ON)

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:
UPD02R205LG-K08-3030-R
UPD02R205LG-K08-5060-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(3×3)
DFN-8(5×6)
1
S
S
2
S
S
Pin Assignment
3 4 5 6 7 8
S G D D D D
S G D D D D
Packing
Tape Reel
Tape Reel
S: Source
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R210-018.b
UPD02R205L

Preliminary
Power MOSFET
MARKING
DFN-8(3×3)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
DFN-8(5×6)
2 of 7
QW-R210-018.b
UPD02R205L

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150°C)
Pulsed Drain Current (t=300μs)
Single Pulsed Avalanche Energy
Continuous Source-Drain Diode
Current
SYMBOL
VDSS
VGSS
TC=25°C
TC=70°C
TC=25°C
IDM
EAS
RATINGS
-20
±8
-12 (Note 2)
-12 (Note 2)
-30
108
UNIT
V
V
A
A
A
mJ
IS
-12 (Note 2)
A
ID
24
W
19
W
Power Dissipation
PD
17
W
TC=70°C
12
W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Package limited.
3. L = 1mH, IAS = 14.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
TC=25°C

DFN-8(3×3)
DFN-8(5×6)
DFN-8(3×3)
DFN-8(5×6)
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
DFN-8(3×3)
Junction to Ambient
θJA
DFN-8(5×6)
DFN-8(3×3)
Junction-to-Case
θJC
DFN-8(5×6)
Notes: 1. Surface mounted on 1" x 1" FR4 board.
2 Maximum under steady state conditions is 80°C/W.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
80
36
5.2
6.5
UNIT
°C/W
°C/W
°C/W
°C/W
3 of 7
QW-R210-018.b
UPD02R205L

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
On-State Drain Current (Note 1)
Static Drain-Source On-State
Resistance (Note 1)
SYMBOL
TEST CONDITIONS
MIN
BVDSS
ID=-250µA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55°C
VGS=+8V, VDS=0V
VGS=-8V, VDS=0V
-20
VDS=VGS, ID=-250µA
VDS≤-5V, VGS=-4.5V
VGS=-4.5V, ID=-6A
VGS=-2.5V, ID=-2A
VGS=-1.8V, ID=-2A
VGS=-1.5V, ID=-1A
-0.4
-20
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
DYNAMIC PARAMETERS (Note 3)
Input Capacitance
CISS
VGS=0V, VDS=-10V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-10V, VGS=-45V, ID=-1A
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=-10V, VDS=-4.5V,
Rise Time
tR
ID=-1A, RG=25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source-Drain Diode
IS
TC=25°C
Current
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
IS=-8.5A,VGS=0V
Notes: 1. Pulse test; pulse width ≤300μs, duty cycle≤2%.
2. Essentially independent of operating temperature.
3. Guaranteed by design, not subject to production testing.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TYP
UNIT
-1
-10
+100
-100
V
µA
µA
nA
nA
-1
17
22
29
38
1.3
MAX
420
270
240
6.3
20.5
27
36
60
V
A
mΩ
mΩ
mΩ
mΩ
13
pF
pF
pF
Ω
240
10
8
44
93
830
500
-0.8
nC
nC
nC
ns
ns
ns
ns
-12
A
-30
-1.2
A
V
4 of 7
QW-R210-018.b
UPD02R205L

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R210-018.b
UPD02R205L

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
6 of 7
QW-R210-018.b
UPD02R205L
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R210-018.b