UNISONIC TECHNOLOGIES CO., LTD Preliminary UPD02R205L -12A, -20V, P-CHANNEL 20V (D-S) POWER MOSFET 1 DESCRIPTION DFN-8(5x6) The UTC UPD02R205L is a P-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UPD02R205L is suitable for DC/DC converter, load switch and charger switch for portable devices. Power MOSFET 1 FEATURES DFN-8(3x3) * RDS(ON) <20.5 mΩ @ VGS=-4.5V, ID=-6A RDS(ON) <27 mΩ @ VGS=-2.5V, ID=-2A RDS(ON) <36 mΩ @ VGS=-1.8V, ID=-2A RDS(ON) <60 mΩ @ VGS=-1.5V, ID=-1A * Low RDS(ON) SYMBOL ORDERING INFORMATION Ordering Number Note: UPD02R205LG-K08-3030-R UPD02R205LG-K08-5060-R Pin Assignment: G: Gate D: Drain Package DFN-8(3×3) DFN-8(5×6) 1 S S 2 S S Pin Assignment 3 4 5 6 7 8 S G D D D D S G D D D D Packing Tape Reel Tape Reel S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R210-018.b UPD02R205L Preliminary Power MOSFET MARKING DFN-8(3×3) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DFN-8(5×6) 2 of 7 QW-R210-018.b UPD02R205L Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150°C) Pulsed Drain Current (t=300μs) Single Pulsed Avalanche Energy Continuous Source-Drain Diode Current SYMBOL VDSS VGSS TC=25°C TC=70°C TC=25°C IDM EAS RATINGS -20 ±8 -12 (Note 2) -12 (Note 2) -30 108 UNIT V V A A A mJ IS -12 (Note 2) A ID 24 W 19 W Power Dissipation PD 17 W TC=70°C 12 W Junction Temperature TJ -55 ~ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Package limited. 3. L = 1mH, IAS = 14.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C TC=25°C DFN-8(3×3) DFN-8(5×6) DFN-8(3×3) DFN-8(5×6) THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL DFN-8(3×3) Junction to Ambient θJA DFN-8(5×6) DFN-8(3×3) Junction-to-Case θJC DFN-8(5×6) Notes: 1. Surface mounted on 1" x 1" FR4 board. 2 Maximum under steady state conditions is 80°C/W. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 80 36 5.2 6.5 UNIT °C/W °C/W °C/W °C/W 3 of 7 QW-R210-018.b UPD02R205L Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage On-State Drain Current (Note 1) Static Drain-Source On-State Resistance (Note 1) SYMBOL TEST CONDITIONS MIN BVDSS ID=-250µA, VGS=0V VDS=-20V, VGS=0V VDS=-20V, VGS=0V, TJ=55°C VGS=+8V, VDS=0V VGS=-8V, VDS=0V -20 VDS=VGS, ID=-250µA VDS≤-5V, VGS=-4.5V VGS=-4.5V, ID=-6A VGS=-2.5V, ID=-2A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-1A -0.4 -20 IDSS IGSS VGS(TH) ID(ON) RDS(ON) DYNAMIC PARAMETERS (Note 3) Input Capacitance CISS VGS=0V, VDS=-10V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS Gate Resistance RG f=1.0MHz SWITCHING PARAMETERS Total Gate Charge QG VDS=-10V, VGS=-45V, ID=-1A Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=-10V, VDS=-4.5V, Rise Time tR ID=-1A, RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source-Drain Diode IS TC=25°C Current Pulse Diode Forward Current ISM Body Diode Voltage VSD IS=-8.5A,VGS=0V Notes: 1. Pulse test; pulse width ≤300μs, duty cycle≤2%. 2. Essentially independent of operating temperature. 3. Guaranteed by design, not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP UNIT -1 -10 +100 -100 V µA µA nA nA -1 17 22 29 38 1.3 MAX 420 270 240 6.3 20.5 27 36 60 V A mΩ mΩ mΩ mΩ 13 pF pF pF Ω 240 10 8 44 93 830 500 -0.8 nC nC nC ns ns ns ns -12 A -30 -1.2 A V 4 of 7 QW-R210-018.b UPD02R205L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R210-018.b UPD02R205L Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R210-018.b UPD02R205L Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R210-018.b