Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)a Symbol VDS VGS TA = 25 °C TA = 70 °C 8.5 7.1 IDM IAS EAS Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa ID 10 s TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range 3.3 2.3 Steady State 60 ± 20 6.0 5.0 40 15 11 1.7 1.2 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical 36 75 17 Maximum 45 90 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71146 S09-1341-Rev. F, 13-Jul-09 www.vishay.com 1 Si4850EY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 20 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage VDS ≥ 5 V, VGS = 10 V a Typ. Max. Unit V 3 nA µA 40 A VGS = 10 V, ID = 6.0 A 0.018 0.022 VGS = 10 V, ID = 6.0 A, TJ = 125 °C 0.031 0.037 VGS = 10 V, ID = 6.0 A, TJ = 175 °C 0.039 0.047 0.031 VGS = 4.5 V, ID = 5.1 A 0.025 gfs VDS = 15 V, ID = 6.0 A 25 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 18 27 VDS = 30 V, VGS = 10 V, ID = 6.0 A 3.4 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance VGS = 0.1 V, f = 5 MHz 0.5 td(on) Turn-On Delay Time VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5.3 IF = 1.7 A, dI/dt = 100 A/µs 1.4 2.4 10 20 10 20 25 50 12 24 50 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 V thru 5 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 4V 16 8 24 16 TC = 150 °C 8 25 °C 3V 0 0.0 - 55 °C 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 3.0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 71146 S09-1341-Rev. F, 13-Jul-09 Si4850EY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1400 0.06 1200 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.05 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 1000 800 600 400 Coss 0.01 200 0.00 0 0 8 16 24 32 Crss 0 40 10 20 40 50 60 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 2.2 ID = 6.0 A ID = 6.0 V 2.0 VGS = 10 V 8 VDS = 30 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 6 4 1.8 1.6 1.4 1.2 1.0 2 0.8 0 0 4 8 12 16 0.6 - 50 20 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 0.06 TJ = 175 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.05 TJ = 25 °C 10 0.04 ID = 6.0 A 0.03 0.02 0.01 1 0.00 0.00 0.5 1.0 1.5 2.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71146 S09-1341-Rev. F, 13-Jul-09 2.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4850EY Vishay Siliconix 0.8 50 0.4 40 0.0 30 Power (W) VGS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ID = 250 µA - 0.4 - 0.8 20 10 - 1.2 - 50 0 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 TJ - Temperature (°C) 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71146. www.vishay.com 4 Document Number: 71146 S09-1341-Rev. F, 13-Jul-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000