Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 8.5 0.031 @ VGS = 4.5 V 7.2 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4850EY Si4850EY—E3 (Lead Free) Si4850EY-T1 (with Tape and Reel) Si4850EY-T1—E3 (Lead Free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID 6.0 7.1 5.0 40 Avalanche Current IAS 15 Repetitive Avalanche Energy EAS Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V 8.5 IDM TA = 25_C 11 A mJ 3.3 1.7 2.3 1.2 TJ, Tstg Unit −55 to 175 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 36 45 75 90 17 20 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71146 S-40572—Rev. D, 29-Mar-04 www.vishay.com 1 Si4850EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea "100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55_C 20 nA mA 40 VDS w 5 V, VGS = 10 V rDS(on) V A VGS = 10 V, ID = 6.0 A 0.018 0.022 VGS = 10 V, ID = 6.0 A, TJ = 125_C 0.031 0.037 VGS = 10 V, ID = 6.0 A, TJ = 175_C 0.039 0.047 0.031 VGS = 4.5 V, ID = 5.1 A 0.025 gfs VDS = 15 V, ID = 6.0 A 25 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 18 27 VDS = 30 V, VGS = 10 V, ID = 6.0 A 3.4 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 5.3 VGS =0.1 V, f = 5 MHz 1.4 2.4 td(on) 10 20 tr 10 20 25 50 12 24 50 80 Rise Time Turn-Off Delay Time nC VDD = 30 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 0.5 IF = 1.7 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 5 V 32 I D − Drain Current (A) I D − Drain Current (A) 32 24 4V 16 8 24 16 TC = 150_C 8 25_C −55_C 3V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 71146 S-40572—Rev. D, 29-Mar-04 Si4850EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1400 1200 0.05 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.06 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 Ciss 1000 800 600 400 Coss 200 0.00 Crss 0 0 8 16 24 32 40 0 10 Gate Charge 2.0 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 40 50 60 On-Resistance vs. Junction Temperature 2.2 VDS = 30 V ID = 6.0 A 8 30 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 10 20 6 4 2 VGS = 10 V ID = 6.0 A 1.8 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 −50 20 −25 0 Qg − Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 50 TJ = 175_C r DS(on) − On-Resistance ( W ) I S − Source Current (A) 0.05 TJ = 25_C 10 ID = 6.0 A 0.03 0.02 0.01 0.00 1 0.00 0.04 0.5 1.0 1.5 2.0 VSD − Source-to-Drain Voltage (V) Document Number: 71146 S-40572—Rev. D, 29-Mar-04 2.5 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4850EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power Threshold Voltage 0.8 50 ID = 250 mA 40 Power (W) V GS(th) Variance (V) 0.4 0.0 30 −0.4 20 −0.8 10 −1.2 −50 0 −25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 Time (sec) TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71146 S-40572—Rev. D, 29-Mar-04