Si3495DV Vishay Siliconix P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.5 V Rated • Ultra-Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch and PA Switch for Portable Devices TSOP-6 Top V iew 3 mm (4) S 1 6 2 5 3 4 (3) G 2.85 mm Ordering Information: Si3495DV-T1-E3 (Lead (Pb)-free) Si3495DV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 95xxx (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±5 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID Continuous Source Current (Diode Conduction)a IS TA = 25 °C Maximum Power Dissipationa TA = 85 °C PD -7 - 5.3 - 3.9 - 20 - 1.7 - 0.9 2.0 1.1 1.0 0.6 TJ, Tstg Operating Junction and Storage Temperature Range V - 3.6 IDM Pulsed Drain Current Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Foot (Drain) t≤5s Steady State Steady State RthJA RthJF Typical Maximum 45 62.5 90 110 25 30 Unit °C/W Note: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 73135 S09-2110-Rev. C, 12-Oct-09 www.vishay.com 1 Si3495DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. - 0.35 Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage - 0.75 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C - 10 VDS = - 5 V, VGS = - 4.5 V - 20 A VGS = - 4.5 V, ID = - 7 A 0.020 0.024 VGS = - 2.5 V, ID = - 6.2 A 0.024 0.030 VGS = - 1.8 V, ID = - 5.2 A 0.030 0.038 VGS = - 1.5 V, ID = - 3 A 0.036 0.048 Drain-Source On-State Resistancea RDS(on) Transconductancea gfs VDS = - 5 V, ID = - 7 A 25 VSD IS = - 1.7 A, VGS = 0 V - 0.62 - 1.1 25 38 VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A 2.5 Forward Diode Forward Voltagea µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 7 4 td(on) Turn-On Delay Time VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = - 1.7 A, dI/dt = 100 A/µs 8.5 13 19 30 36 55 200 300 106 160 35 60 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 5 V thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 1.5 V 12 8 4 12 8 TC = 125 °C 4 25 °C 1V - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.4 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 Document Number: 73135 S09-2110-Rev. C, 12-Oct-09 Si3495DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3500 0.10 0.06 VGS = 1.8 V VGS = 1.5 V 2500 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3000 0.08 0.04 VGS = 2.5 V Ciss 2000 1500 1000 Coss 0.02 500 VGS = 4.5 V Crss 0.00 0 0 4 8 12 16 20 0 4 ID - Drain Current (A) 8 20 Capacitance 6 1.8 VDS = 10 V ID = 7 A VGS = 4.5 V ID = 7 A 5 4 3 2 (Normalized) R DS(on) - On-Resistance 1.4 1.2 1.0 0.8 1 0.6 - 50 0 0 4 8 12 16 20 24 28 32 - 25 0 25 50 75 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.10 ID = 7 A TJ = 150 °C R DS(on) - On-Resistance (Ω) 10 TJ = 25 °C 1 0.1 0.0 100 Qg - Total Gate Charge (nC) 20 I S - Source Current (A) 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 12 0.08 0.06 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73135 S09-2110-Rev. C, 12-Oct-09 5 www.vishay.com 3 Si3495DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 40 32 ID = 250 µA 0.2 24 Power (W) VGS(th) Variance (V) 0.3 0.1 TA = 25 °C 16 0.0 8 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 DC TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 360 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-3 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73135 S09-2110-Rev. C, 12-Oct-09 Si3495DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73135. Document Number: 73135 S09-2110-Rev. 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