TCMT110. Series Datasheet

TCMT110. Series
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, Single Channel,
Half Pitch Mini-Flat Package
C
E
4
3
FEATURES
• Low profile package (half pitch)
• AC isolation test voltage 3750 VRMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) selected into groups
1
2
• Low temperature coefficient of CTR
A
C
• Wide ambient temperature range
22628-1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
APPLICATIONS
The TCMT110. series consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4 pin package.
• Programmable logic controllers
• Modems
• Answering machines
The elements are mounted on one leadframe providing a
fixed distance between input and output for highest safety
requirements.
• General applications
AGENCY APPROVALS
• UL1577, file no. E76222, double protection
• cUL component acceptance service no. 5A, double
protection
• DIN EN 60747-5-5 (VDE 0884-5)
• FIMKO: FI EN 60950-1:2006
• BSI: BS EN60065:2002
BS EN60950-1:2006
• CQC GB 8898-2011, GB 4943.1-2011 (suitable for
installation altitude below 2000 m)
ORDERING INFORMATION
SSOP-4
T
C
M
T
1
1
0
#
PART NUMBER
AGENCY CERTIFIED/
PACKAGE
UL, cUL, FIMKO,
BSI, VDE
SSOP-4
7.21 mm
CTR (%)
5 mA
50 to 600
10 mA
40 to 80
5 mA
63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
TCMT1100 TCMT1101 TCMT1102 TCMT1103 TCMT1104 TCMT1105 TCMT1106 TCMT1107 TCMT1108 TCMT1109
Note
• Available only on tape and reel.
Document Number: 83510
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 3.0, 10-Mar-16
TCMT110. Series
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 μs
IFSM
1.5
A
Pdiss
100
mW
Tj
125
°C
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
mA
Power dissipation
Junction temperature
OUTPUT
Collector current
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
Power dissipation
Junction temperature
IC
50
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
VISO
3750
VRMS
COUPLER
AC isolation test voltage (RMS)
Related to standard climate 23/50
DIN 50014
Total power dissipation
Ptot
250
mW
Operating ambient temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 125
°C
Soldering temperature (1)
Tsld
260
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices. Also refer to “Assembly Instructions”
(www.vishay.com/doc?80054).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VR = 0, f = 1 MHz
MIN.
TYP.
MAX.
VF
1.35
1.6
Cj
8
UNIT
INPUT
Forward voltage
Junction capacitance
V
pF
OUTPUT
Collector emitter voltage
IC = 100 μA
VCEO
70
Emitter collector voltage
IE = 100 μA
VECO
7
VCE = 20 V, IF = 0 A
ICEO
100
nA
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
100
kHz
f = 1 MHz
Ck
0.3
pF
Collector dark current
V
V
COUPLER
Coupling capacitance
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Document Number: 83510
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 3.0, 10-Mar-16
TCMT110. Series
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CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
VCE = 5 V, IF = 5 mA
TCMT1100
CTR
50
VCE = 5 V, IF = 10 mA
IC/IF
VCE = 5 V, IF = 5 mA
TYP.
MAX.
UNIT
600
%
TCMT1101
CTR
40
80
%
TCMT1102
CTR
63
125
%
TCMT1103
CTR
100
200
%
TCMT1104
CTR
160
320
%
TCMT1105
CTR
50
150
%
TCMT1106
CTR
100
300
%
TCMT1107
CTR
80
160
%
TCMT1108
CTR
130
260
%
TCMT1109
CTR
200
400
%
MAX.
UNIT
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TEST CONDITION
SYMBOL
Delay time
PARAMETER
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
td
MIN.
TYP.
4.0
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
tr
5.5
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
tf
7.0
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
ts
1.5
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
ton
9.5
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
toff
8.5
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2)
ton
3.0
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2)
toff
20.0
μs
+5V
IF
IF
0
IF
I C = 2 mA; adjusted through
input amplitude
tp
t
100 %
90 %
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Oscilloscope
R L = 1 MΩ
C L = 20 pF
Channel II
50 Ω
10 %
0
tr
td
100 Ω
Fig. 1 - Test Circuit, Non-Saturated Operation
0
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 3 - Switching Times
+5V
I F = 10 mA
ts
t on
95 10804
IF
0
IC
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 2 - Test Circuit, Saturated Operation
Document Number: 83510
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 3.0, 10-Mar-16
TCMT110. Series
www.vishay.com
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Climatic classification (according to IEC 68 part 1)
VALUE
UNIT
40/110/21
Comparative tracking index
CTI
175
VISO
3750
Maximum transient isolation voltage
VIOTM
6000
V
Maximum repetitive peak isolation voltage
VIORM
707
V
Maximum rated withstanding isolation voltage
t = 1 min
VRMS
Apparent charge test voltage (method A)
VIORM x 1.6 = VPR, type and sample test,
tm = 60 s, partial discharge < 5 pC
VPR
1132
Vpeak
Apparent Charge Test Voltage (method B)
VIORM x 1.875 = VPR, 100 % production test
with tm = 1 s, partial discharge < 5 pC
VPR
1326
Vpeak
VIO = 500 VDC, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 VDC, Tamb = TSI
RIO
109
Ω
PSO
350
mW
Input safety current
ISI
150
mA
Input safety temperature
TSI
175
°C
Isolation resistance
Isolation resistance (under fault conditions)
Output safety power
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Creepage distance
5
mm
Clearance distance
5
mm
0.4
mm
Insulation thickness, reinforced rated
per IEC60950 2.10.5.1
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
100
300
Coupled device
IF - Forward Current (mA)
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
250
200
Phototransistor
150
IR-diode
100
50
0
0
96 11700
40
80
120
Tamb - Ambient Temperature (°C)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
10
Tamb = 110 °C
Tamb = 75 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = -55 °C
1
0.1
0.6
0.8
1.0
1.2
1.4
1.6
VF - Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
Document Number: 83510
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 3.0, 10-Mar-16
TCMT110. Series
www.vishay.com
IC - Collector Current (mA)
55
IF = 35 mA
50
45
IF = 30 mA
40
35
IF = 25 mA
30
IF = 20 mA
25
20
IF = 15 mA
15
10
IF = 10 mA
IF = 1 mA
5
IF = 5 mA
0
0
1
2
3
4
5
6
7
8
9
10
NCTR - Normalized CTR (non-saturated)
Vishay Semiconductors
1.2
IF = 5 mA
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20
VCE - Collector Emitter Voltage (non-sat) (V)
Fig. 6 - Collector Current vs. Collector Emitter Voltage
20
40
60
80 100 120
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
1.2
NCTR - Normalized CTR (sat)
IF = 0 mA
ICE0 - Leakage Current (nA)
0
Tamb - Ambient Temperature (°C)
10 000
1000
VCE = 40 V
100
10
VCE = 24 V
1
0.1
VCE = 12 V
0.01
0.001
IF = 5 mA
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20
0
20
40
60
IF = 10 mA
10
IF = 5 mA
6
4
IF = 1 mA
IF = 2 mA
2
0
0
0.1
0.2
0.3
20
40
60
80 100 120
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
VCEsat - Collector Emitter Voltage (V)
14
8
0
Tamb - Ambient Temperature (°C)
Fig. 7 - Leakage Current vs. Ambient Temperature
12
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
-60 -40 -20
80 100 120
Tamb - Ambient Temperature (°C)
IC - Collector Current (mA)
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0.4
VCE - Collector Emitter Voltage (V)
Fig. 8 - Collector Current vs. Collector Emitter Voltage
0.40
0.35
IF = 10 mA
0.30
Ic = 5 mA
0.25
0.20
Ic = 2 mA
0.15
0.10
0.05
Ic = 1 mA
0.00
-60 -40 -20
0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
Document Number: 83510
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 3.0, 10-Mar-16
TCMT110. Series
www.vishay.com
Vishay Semiconductors
1000
Tamb = 0 °C
1.2
VCC = 5 V
Tamb = -55 °C
Tamb = 25 °C
1.0
FCTR (kHz)
NCTR - Normalized CTR (NS)
1.4
0.8
0.6
Tamb = 75 °C
0.4
Tamb = 100 °C
Normalized to:
IF = 5 mA, VCE = 5 V,
Tamb = 25 °C
0.2
0
0.1
1
10
100
10
1
0.1
100
1
IF - Forward Current (mA)
Fig. 12 - Normalized CTR (non-saturated) vs. Forward Current
100
Fig. 15 - FCTR vs. Collector Current
1000
1.2
Tamb = 0 °C
VCE = 0.4 V
Normalized to:
IF = 5 mA,
VCE = 5 V,
Tamb = 25 °C
1.0
0.8
VCE = 5 V, IC = 2 mA
Tamb = -55
- °C
0.6
0.4
Tamb = 25 °C
0.2
Tamb = 75 °C
Tamb = 100 °C
0
0.1
1
10
ton, toff Switching Time (μs)
NCTR - Normalized CTR (sat)
10
IC (mA)
100
toff (μs)
10
1
ton (μs)
0.1
100
0
5
10
15
20
RL - Load Resistance (kΩ)
IF - Forward Current (mA)
Fig. 13 - Normalized CTR (saturated) vs. Forward Current
Fig. 16 - Switching Time vs. Load Resistance
0
VCE = 5 V
-20
RL = 100 Ω
Phase Angle (deg)
-40
RL = 1000 Ω
-60
-80
-100
-120
-140
-160
1
10
100
1000
f - Frequency (kHz)
Fig. 14 - FCTR vs. Phase Angle
Document Number: 83510
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 3.0, 10-Mar-16
TCMT110. Series
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Vishay Semiconductors
0.60
0.10 ± 0.10
0.4 ± 0.1
4.40 typ.
0.2 ± 0.05
2.85 max.
2.60 ± 0.20
2.00 ± 0.10
PACKAGE DIMENSIONS in millimeters
1.27 nom.
4
+ 0.20
- 0.30
7.00 ± 0.30
Lead coplanarity
0.1 max.
3
1.27
0.9
Possible footprint
5.00
7.60
Pin One I.D.
1
2
PACKAGE MARKING (example)
MT1100
V YWW 68
TAPE AND REEL PACKAGING in millimeters
2 ± 0.1
0.3 ± 0.05
4 ± 0.1
1.55 ± 0.05
1.75 ± 0.1
Pin 1
7.5 ± 0.1
16 ± 0.3
4.4
7.4 ± 0.1
7.4 ± 0.1
5°
2.2 ± 0.1
2.6 ± 0.1
8 ± 0.1
2.95 ± 0.1
1.6 ± 0.1
Fig. 17
Document Number: 83510
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 3.0, 10-Mar-16
TCMT110. Series
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SOLDER PROFILES
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
50
max. ramp up 3 °C/s
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 18 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for SMD Devices
Document Number: 83510
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Rev. 3.0, 10-Mar-16
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Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000