TCMT1600, TCMT4600, TCMT4606 Datasheet

TCMT1600, TCMT4600, TCMT4606
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input,
Single / Quad Channel, Half Pitch Mini-Flat Package
FEATURES
• Low profile package (half pitch)
• AC isolation test voltage 3750 VRMS
• Low coupling capacitance of typical 0.3 pF
• Low temperature coefficient of CTR
• Wide ambient temperature range
22628-1
22775
C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
E
9
APPLICATIONS
• Programmable logic controllers
1
2
A
8
AGENCY APPROVALS
C
4 PIN
• UL1577, file no. E76222, double protection
16 PIN
• cUL component acceptance service no 5A, double
protection
• DIN EN 60747-5-5 (VDA 0884-5)
DESCRIPTION
• FIMKO: FI EN 60950-1:2006
The low profile miniflat package includes an optocoupler
with AC Input and transistor output. It is available in single
channel (4 pin) TCMT1600 or quad channel (16 pin)
TCMT4600.
• BSI: BS EN 60065:2002; BS EN60950-1:2006
• CQC GB 8898-2011, GB 4943.1-2011 (suitable for
installation altitude below 2000 m)
ORDERING INFORMATION
T
C
M
T
#
6
0
SOP-#
#
7 mm
PART NUMBER
AGENCY CERTIFIED/PACKAGE
CTR (%)
SINGLE CHANNEL
UL, cUL, FIMKO, BSI, VDE
QUAD CHANNEL
80 to 300
80 to 300
100 to 300
SOP-4
TCMT1600
-
-
SOP-4
TCMT1600T3 (1)
-
-
SOP-16
-
TCMT4600
TCMT4606
SOP-16
-
TCMT4600T0 (1)
-
Notes
• Available only on tape and reel.
(1) Product is rotated 180° in tape and reel cavity.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
IF
± 60
mA
INPUT
Forward current
Forward surge current
Power dissipation
Junction temperature
Rev. 2.6, 21-Jul-15
tp ≤ 10 μs
IFSM
± 1.5
A
Pdiss
100
mW
Tj
125
°C
Document Number: 83512
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
OUTPUT
Collector current
IC
50
mA
ICM
100
mA
Pdiss
150
mW
Tj
125
°C
AC isolation test voltage (RMS)
VISO
3750
VRMS
Total power dissipation
Ptot
250
mW
Operating ambient temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-40 to +125
°C
Soldering temperature (1)
Tsld
260
°C
tp/T = 0.5, tp ≤ 10 ms
Collector peak current
Power dissipation
Junction temperature
COUPLER
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Wave soldering three cycles are allowed. Also refer to “Assembly Instructions” (www.vishay.com/doc?80054).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 50 mA
VF
-
1.35
1.6
V
VR = 0 V, f = 1 MHz
Cj
-
8
-
pF
Collector emitter voltage
IC = 100 μA
VCEO
70
-
-
V
Emitter collector voltage
IE = 100 μA
VECO
7
-
-
V
VCE = 20 V, IF = 0
ICEO
-
-
100
nA
Collector emitter saturation voltage
IF = ± 10 mA, IC = 1 mA
VCEsat
-
-
0.3
V
Cut-off frequency
VCE = 5 V, IF = ± 10 mA,
RL = 100 Ω
fc
-
100
-
kHz
f = 1 MHz
CIO
-
0.3
-
pF
Junction capacitance
OUTPUT
Collector dark current
COUPLER
Capacitance (input to output)
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
IC/IF
Rev. 2.6, 21-Jul-15
TEST CONDITION
VCE = 5 V, IF = ± 5 mA
PART
SYMBOL
MIN.
MAX.
UNIT
TCMT1600
CTR
80
TYP.
300
%
TCMT4600
CTR
80
300
%
TCMT4606
CTR
100
300
%
Document Number: 83512
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCMT1600, TCMT4600, TCMT4606
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
td
-
3
-
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
tr
-
3
-
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
tf
-
4.7
-
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
ts
-
0.3
-
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
ton
-
6
-
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω
(see figure 1)
toff
-
5
-
μs
Turn-on time
VS = 5 V, IF = ± 10 mA, RL = 1 kΩ
(see figure 2)
ton
-
9
-
μs
Turn-off time
VS = 5 V, IF = ± 10 mA, RL = 1 kΩ
(see figure 2)
toff
-
18
-
μs
IF
IF
0
+5V
IF
IC = 2 mA;
RG = 50 Ω
tp
= 0.01
T
tp = 50 µs
0
Adjusted Through
Input Amplitude
10 %
0
50 Ω
100 Ω
15234
tr
td
Oscilloscope
Channel II
RL = 1 MΩ
CL = 20 pF
Fig. 1 - Test Circuit, Non-Saturated Operation
IF
t
100 %
90 %
Channel I
0
tp
IC
IF = 10 mA
t on
tp
td
tr
t on (= td + tr)
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 3 - Switching Times
+5V
RG = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
15235
1 kΩ
Oscilloscope
R L = 1 MΩ
C L = 20 pF
Fig. 2 - Test Circuit, Saturated Operation
Rev. 2.6, 21-Jul-15
Document Number: 83512
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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TCMT1600, TCMT4600, TCMT4606
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Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Climatic classification (according to IEC 68 part 1)
VALUE
UNIT
55/110/21
Comparative tracking index
CTI
175
VISO
3750
Maximum transient isolation voltage
VIOTM
6000
V
Maximum repetitive peak isolation voltage
VIORM
707
V
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = TSI
RIO
109
Ω
Output safety power
PSO
350
mW
Input safety current
ISI
200
mA
Maximum rated withstanding isolation voltage
40 % to 60 % RH, AC test of 1 min
Insulation resistance
Isolation resistance (under fault conditions)
Input safety temperature
VRMS
TSI
175
°C
Apparent charge test voltage (method A)
VIORM x 1.6 = VPR, type and sample test
tm = 60 s, partial discharge < 5 pC
VPR
1132
Vpeak
Apparent charge test voltage (method B)
VIORM x 1.875 = VPR, 100 % production
test with tm = 1 s, partial discharge < 5 pC
VPR
1326
Vpeak
≥5
mm
≥5
mm
≥ 0.4
mm
Creepage distance
Clearance distance
Insulation thickness
DTI
Environment (pollution degree in accordance to DIN VDE 0109)
2
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
100
300
Coupled device
IF - Forward Current (mA)
Ptot - Total Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
250
200
Phototransistor
150
IR-diode
100
50
10
Tamb = 110 °C
Tamb = 75 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = -55 °C
1
0.1
0
0
96 11700
40
80
120
Tamb - Ambient Temperature (°C)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Rev. 2.6, 21-Jul-15
0.6
0.8
1.0
1.2
1.4
1.6
VF - Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
Document Number: 83512
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TCMT1600, TCMT4600, TCMT4606
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IC - Collector Current (mA)
55
IF = 35 mA
50
45
IF = 30 mA
40
35
IF = 25 mA
30
IF = 20 mA
25
20
IF = 15 mA
15
10
IF = 10 mA
IF = 1 mA
5
IF = 5 mA
0
0
1
2
3
4
5
6
7
8
9
10
NCTR - Normalized CTR (non-saturated)
Vishay Semiconductors
1.2
IF = 5 mA
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20
VCE - Collector Emitter Voltage (non-sat) (V)
Fig. 6 - Collector Current vs. Collector Emitter Voltage
20
40
60
80 100 120
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
1.2
NCTR - Normalized CTR (sat)
IF = 0 mA
ICE0 - Leakage Current (nA)
0
Tamb - Ambient Temperature (°C)
10 000
1000
VCE = 40 V
100
10
VCE = 24 V
1
0.1
VCE = 12 V
0.01
0.001
IF = 5 mA
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20
0
20
40
60
IF = 10 mA
10
IF = 5 mA
6
4
IF = 1 mA
IF = 2 mA
2
0
0
0.1
0.2
0.3
0.4
VCE - Collector Emitter Voltage (V)
Fig. 8 - Collector Current vs. Collector Emitter Voltage
Rev. 2.6, 21-Jul-15
20
40
60
80 100 120
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
VCEsat - Collector Emitter Voltage (V)
14
8
0
Tamb - Ambient Temperature (°C)
Fig. 7 - Leakage Current vs. Ambient Temperature
12
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
-60 -40 -20
80 100 120
Tamb - Ambient Temperature (°C)
IC - Collector Current (mA)
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
0.40
0.35
IF = 10 mA
0.30
Ic = 5 mA
0.25
0.20
Ic = 2 mA
0.15
0.10
0.05
Ic = 1 mA
0.00
-60 -40 -20
0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
Document Number: 83512
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TCMT1600, TCMT4600, TCMT4606
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Vishay Semiconductors
1000
Tamb = 0 °C
1.2
VCC = 5 V
Tamb = -55 °C
Tamb = 25 °C
1.0
FCTR (kHz)
NCTR - Normalized CTR (NS)
1.4
0.8
0.6
Tamb = 75 °C
0.4
Tamb = 100 °C
Normalized to:
IF = 5 mA, VCE = 5 V,
Tamb = 25 °C
0.2
0
0.1
1
10
100
10
1
0.1
100
1
IF - Forward Current (mA)
Fig. 12 - Normalized CTR (non-saturated) vs. Forward Current
100
Fig. 15 - FCTR vs. Collector Current
1000
1.2
Tamb = 0 °C
VCE = 0.4 V
Normalized to:
IF = 5 mA,
VCE = 5 V,
Tamb = 25 °C
1.0
0.8
VCE = 5 V, IC = 2 mA
ton, toff Switching Time (μs)
NCTR - Normalized CTR (sat)
10
IC (mA)
Tamb = -55
- °C
0.6
0.4
Tamb = 25 °C
0.2
Tamb = 75 °C
Tamb = 100 °C
0
0.1
1
100
toff (μs)
10
1
ton (μs)
0.1
10
100
0
5
10
15
20
RL - Load Resistance (kΩ)
IF - Forward Current (mA)
Fig. 13 - Normalized CTR (saturated) vs. Forward Current
Fig. 16 - Switching Time vs. Load Resistance
0
VCE = 5 V
-20
RL = 100 Ω
Phase Angle (deg)
-40
RL = 1000 Ω
-60
-80
-100
-120
-140
-160
1
10
100
1000
f - Frequency (kHz)
Fig. 14 - FCTR vs. Phase Angle
Rev. 2.6, 21-Jul-15
Document Number: 83512
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TCMT1600, TCMT4600, TCMT4606
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
4
3
0.2 ± 0.05
4.40 typ.
0.60
Pin One I.D.
+ 0.20
- 0.30
7.00 ± 0.30
Lead coplanarity
0.1 max.
2
Possible footprint
0.4 ± 0.1
1.27 nom.
Rev. 2.6, 21-Jul-15
0.10 ± 0.10
1.27
0.9
2.85 max.
2.60 ± 0.20
2.00 ± 0.10
1
5.00
7.60
Document Number: 83512
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCMT1600, TCMT4600, TCMT4606
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Vishay Semiconductors
PACKAGE MARKING
TCMT4600
MT1600
V YWW 68
V YWW 68
PACKAGING INFORMATION (TAPE AND REEL) in millimeters
Top cover tape
Embossed carrier
Embossment
17998
Fig. 17 - Tape and Reel Shipping Medium
2 ± 0.1
0.3 ± 0.05
4 ± 0.1
1.55 ± 0.05
1.75 ± 0.1
Pin 1
7.5 ± 0.1
16 ± 0.3
4.4
7.4 ± 0.1
7.4 ± 0.1
5°
2.2 ± 0.1
2.6 ± 0.1
8 ± 0.1
2.95 ± 0.1
1.6 ± 0.1
Fig. 18 - Tape and Reel Packing (3000 parts per reel)
Rev. 2.6, 21-Jul-15
Document Number: 83512
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TCMT1600, TCMT4600, TCMT4606
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Vishay Semiconductors
1.75
Ø 1.55
2.6
2
4
0.3
technical drawings
according to DIN
specification
7.5
10.6
16
5°
Ø 1.6
12
7.4
2.2
Direction of pulling out
18427
Fig. 19 - TTape and Reel Packing for TCMT460X (2000 parts per reel)
1.75
Ø 1.55
2.6
4
2
0.3
technical drawings
according to DIN
specification
7.5
16
10.6
5°
Ø 1.6
12
7.4
2.2
Direction of pulling out
18427_1
Fig. 20 - TTape and Reel Packing for TCMT460XT0 (2000 parts per reel)
SOLDER PROFILES
HANDLING AND STORAGE CONDITIONS
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
ESD level: HBM class 2
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
200
Moisture sensitivity level 1, according to J-STD-020
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
50
max. ramp up 3 °C/s
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 21 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for SMD Devices
Rev. 2.6, 21-Jul-15
Document Number: 83512
9
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000