UNISONIC TECHNOLOGIES CO., LTD 1N65-CB Preliminary Power MOSFET 1.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 11.5Ω @ VGS = 10V, ID =0.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 1N65G-AA3-R 1N65L-TM3-T 1N65G-TM3-T 1N65L-TN3-R 1N65G-TN3-R 1N65L-T92-B 1N65G-T92-B 1N65L-T92-K 1N65G-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source 1N65G-AA3-R (1)Packing Type (2)Package Type (3)Green Package www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package SOT-223 TO-251 TO-252 TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tape Reel Tube Tape Reel Tape Box Bulk (1) B: Tape Box, K: Bulk, T: Tube, R: Tape Reel (2) AA3: SOT-223, TM3: TO-251, TN3: TO-252, T92: TO-92 (3) L: Lead Free, G: Halogen Free and Lead Free 1 of 7 QW-R205-099.b 1N65-CB Preliminary Power MOSFET MARKING PACKAGE MARKING SOT-223 TO-251 / TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-099.b 1N65-CB Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 1.0 A Continuous ID 1.0 A Drain Current 4.0 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 50 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.2 V/ns SOT-223 8.9 W TO-251/TO-252 Power Dissipation PD 27.6 W TO-92 1.42 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=100mH, IAS=1.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤1.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA Junction to Ambient Junction to Case PARAMETER SOT-223 TO-251/TO-252 TO-92 SOT-223 TO-251/TO-252 TO-92 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 150 110 180 14 4.53 88 UNIT °С/W °С/W °С/W °С/W °С/W °С/W 3 of 7 QW-R205-099.b 1N65-CB Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS = 0V, ID = 250μA 650 VDS = 650V, VGS = 0V Drain-Source Leakage Current IDSS VDS = 480V, TC =125°С Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =0.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS f =1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, Gate-Source Charge QGS ID=1.3A, IG=100μA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD (ON) VDD =30V, VGS=10V, ID =0.5A, Turn-On Rise Time tR RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 1.0 A Reverse Recovery Time tRR IF=1.0A, VDD=100V di/dt = 100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.4 V 10 μA 100 μA 100 nA -100 nA V/°С 4.0 11.5 V Ω 125 20 4.5 pF pF pF 13 2.0 1.0 75 20 50 25 nC nC nC ns ns ns ns 1 4 1.4 215 0.37 A A V ns μC 4 of 7 QW-R205-099.b 1N65-CB Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-099.b 1N65-CB Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) itching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-099.b 1N65-CB Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-099.b