UNISONIC TECHNOLOGIES CO., LTD 6NM65 Preliminary Power MOSFET 6.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM65 is a high voltage super junction MOSFET and is designed to have better characteristics. The UTC 6NM65 Utilizing an advanced charge-balance technology, enhance system efficiency, improve EMI and reliability. such as low gate charge, low on-state resistance and have a high power density and high rugged avalanche characteristics. This super junction MOSFET usually used at AC/DC power conversion, and industrial power applications. FEATURES * RDS(on) < 1.15Ω @ VGS=10V, ID=3A * Improved dv/dt capability * Fast switching * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 6N65L-TA3-T 6N65G-TA3-T TO-220 6N65L-TF3-T 6N65G-TF3-T TO-220F 6N65L-TF1-T 6N65G-TF1-T TO-220F1 6N65L-TM3-T 6N65G-TM3-T TO-251 6N65L-TN3-R 6N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel 1 of 7 QW-R205-084.c 6NM65 Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-084.c 6NM65 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 6 A Pulsed Drain Current (Note 2) IDM 52 A Avalanche Current (Note 2) IAR 13 A Single Pulsed Avalanche Energy (Note 3) EAS 150 mJ Repetitive Avalanche Energy (Note 2) EAR 17 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-220 125 W Power Dissipation PD TO-220F/TO-220F1 40 W TO-251/TO-252 60 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 150mH, IAS = 1.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1 Junction to Ambient TO-251/TO-252 TO-220 Junction to Case TO-220F/TO-220F1 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING UNIT 62.5 °C/W 110 1.0 3.2 2.6 °C/W °C/W °C/W °C/W 3 of 7 QW-R205-084.c 6NM65 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0V, ID = 250μA 650 VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250mA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.5 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, ID=1.3A, VGS=10 V Gate-Source Charge QGS IG=100μA (Note 1,2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD =30V, ID =0.5A, RG =25Ω (Note 1,2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 6 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 6A, dIF / dt =100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating ambient temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.5 V 10 μA 100 nA -100 nA V/°C 4.5 1.15 V Ω 190 150 27 pF pF pF 52 4.0 11 40 80 120 45 nC nC nC nS nS nS nS 316 28 1.4 V 6 A 52 A nS μC 4 of 7 QW-R205-084.c 6NM65 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 7 QW-R205-084.c 6NM65 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R205-084.c 6NM65 Preliminary Power MOSFET 76 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-084.c