Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 1/8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN1N65I3 BVDSS : 700V @Tj=150℃ RDS(ON) : 9.5Ω ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features • BVDSS=700V typically @ Tj=150℃ • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Cell phone charger • Standby power Symbol Outline MTN1N65I3 G：Gate D：Drain S：Source MTN1N65I3 TO-251 G B DC S CYStek Product Specification Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR EAR dv/dt 650 ±30 1.0 0.6 4.0 43 1.0 2.8 4.5 V V A A A mJ A mJ V/ns TL 300 °C 1.5 28 0.2 -55~+150 W W W/°C °C PD Tj, Tstg Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=1.0A, VDD=50V, L=80mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤1.0A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN1N65I3 Symbol Rth,j-c Rth,j-a Value 4.46 83.3 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 3/8 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 650 2.0 - 700 0.5 700 5 - 4.0 ±100 1 10 9.5 V V V/°C V V S nA μA μA Ω VGS=0, ID=250μA, Tj=25℃ VGS=0, ID=250μA, Tj=150℃ Reference to 25°C, ID=250μA VGS=0, ID=1.0A VDS = VGS, ID=250μA VDS =15V, ID=0.5A VGS=±30 VDS =650V, VGS =0 VDS =520V, VGS =0, TC=125°C VGS =10V, ID=0.5A 4.5 0.9 1.3 22.5 27 11.5 27 150 20 4.3 6.7 1.3 1.9 225 30 6.4 160 0.59 1.5 1.0 4.0 - Static BVDSS BVDSS ∆BVDSS/∆Tj BVDS VGS(th) *GFS IGSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - nC ID=1A, VDD=300V, VGS=10V ns VDD=300V, ID=1A, VGS=10V, RG=25Ω, RD=300Ω pF VGS=0V, VDS=25V, f=1MHz V IS=1.0A, VGS=0V A ns μC VGS=0, IF=1A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN1N65I3 MTN1N65I3 Package TO-251 (RoHS compliant) Shipping Marking 50 pcs / tube, 80 tubes / box 1N65 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 4/8 Characteristic Curves MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 5/8 Characteristic Curves(Cont.) MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 6/8 Test Circuits and Waveforms MTN1N65I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 7/8 Test Circuits and Waveforms(Cont.) MTN1N65I3 CYStek Product Specification Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 8/8 CYStech Electronics Corp. TO-251 Dimension Marking: A B C D F G Product Name Date Code 1N65 □□ □□ 3 I K E H 2 1 J Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0472 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.20 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN1N65I3 CYStek Product Specification