Si4435BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.020 at VGS = - 10 V - 9.1 0.035 at VGS = - 4.5 V - 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Advanced High Cell Density Process • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switches • Battery Switch SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View D Ordering Information: Si4435BDY-T1-E3 (Lead (Pb)-free) Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Diode Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD -7 - 7.3 - 5.6 - 50 - 2.1 - 1.25 2.5 1.5 1.6 0.9 TJ, Tstg Operating Junction and Storage Temperature Range V - 9.1 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 85 18 22 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72123 S09-0767-Rev. D, 04-May-09 www.vishay.com 1 Si4435BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. -1 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 VDS = - 5 V, VGS = - 10 V RDS(on) Forward Transconductancea -3 ± 100 µA - 40 A VGS = - 10 V, ID = - 9.1 A 0.015 0.020 VGS = - 4.5 V, ID = - 6.9 A 0.025 0.035 gfs VDS = - 10 V, ID = - 9.1 A 24 VSD IS = - 2.1 A, VGS = 0 V - 0.8 - 1.2 33 70 Ω S V Dynamicb Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.6 Turn-On Delay Time td(on) 10 VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5.8 IF = - 2.1 A, dI/dt = 100 A/µs 15 15 25 110 170 70 110 60 90 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 V thru 6 V TC = - 55 °C 5V 25 °C 40 4V I D - Drain Current (A) I D - Drain Current (A) 40 30 20 10 0 www.vishay.com 2 1 2 3 4 20 10 3V 0 125 °C 30 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 4.0 4.5 Document Number: 72123 S09-0767-Rev. D, 04-May-09 Si4435BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.040 2400 0.030 1800 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.035 0.025 0.020 VGS = 10 V 0.015 Ciss 1200 0.010 600 0.000 0 0 10 20 30 40 50 0 5 10 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 VGS = 10 V ID = 9.1 A VDS = 15 V ID = 9.1 A 1.4 6 4 (Normalized) R DS(on) - On-Resistance 8 1.2 1.0 0.8 2 0.6 - 50 0 0 10 20 30 40 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.10 R DS(on) - On-Resistance (Ω) 50 TJ = 150 °C 10 TJ = 25 °C 1 0.0 25 TJ - Junction Temperature (°C) Gate Charge I S - Source Current (A) 15 On-Resistance vs. Drain Current 10 VGS - Gate-to-Source Voltage (V) Coss Crss 0.005 0.08 0.06 ID = 9.1 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72123 S09-0767-Rev. D, 04-May-09 1.4 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4435BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 30 24 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 0.4 0.0 - 0.2 18 12 6 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10-1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by R(DS)on* 600 IDM Limited P(t) = 0.0001 I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 TA = 25 °C Single Pulse DC 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72123 S09-0767-Rev. D, 04-May-09 Si4435BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72123. Document Number: 72123 S09-0767-Rev. 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