Si4840DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4840DY-T1-E3 (Lead (Pb)-free) Si4840DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C Pulsed Drain Current Avalanche Current L = 0.1 mH Avalanche Energy (Single Pulse) a TA = 25 °C TA = 70 °C 10 11 8 50 IAS 30 EAS 45 PD A mJ 2.8 1.4 3.1 1.56 2.0 1.0 TJ, Tstg Operating Junction and Storage Temperature Range V 14 IDM IS Continuous Source Current (Diode Conduction) Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 33 40 65 80 17 21 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71188 S09-0869-Rev. E, 18-May-09 www.vishay.com 1 Si4840DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 5 VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea 3.0 ± 100 µA 50 A VGS = 10 V, ID = 14 A 0.0075 0.009 VGS = 4.5 V, ID = 12 A 0.0095 0.012 gfs VDS = 15 V, ID = 14 A 50 VSD IS = 2.8 A, VGS = 0 V 0.75 1.1 18.5 28 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = 20 V, VGS = 5 V, ID = 14 A 0.2 td(on) Turn-On Delay Time VDD = 20 V, RL = 20 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 6 7.5 IF = 2.8 A, dI/dt = 100 A/µs 0.8 1.2 15 30 10 20 50 100 20 40 30 60 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 50 50 VGS = 10 V thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 30 3V 20 10 30 20 TC = 125 °C 10 25 °C 2 V thru 0 V - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 71188 S09-0869-Rev. E, 18-May-09 Si4840DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3000 2500 0.016 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.020 0.012 VGS = 4.5 V VGS = 10 V 0.008 0.004 Ciss 2000 1500 1000 Coss 500 0.000 Crss 0 0 10 20 30 40 50 0 8 I D - Drain Current (A) 16 40 Capacitance 2.0 10 VGS = 10 V ID = 14 A VDS = 20 V ID = 14 A 1.6 6 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 32 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 1.2 0.8 0.4 2 0.0 - 50 0 0 7 14 21 28 35 - 25 0 Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 50 0.04 R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 1 0.0 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) I S - Source Current (A) 24 ID = 14 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 71188 S09-0869-Rev. E, 18-May-09 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si4840DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 60 0.4 50 ID = 250 µA 40 0.0 Power (W) VGS(th) Variance (V) 0.2 - 0.2 - 0.4 30 20 - 0.6 10 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10- 4 4. Surface Mounted 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71188. www.vishay.com 4 Document Number: 71188 S09-0869-Rev. E, 18-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000