Si4800BDY Datasheet

Si4800BDY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
ID (A)
0.0185 at VGS = 10 V
9
0.030 at VGS = 4.5 V
7
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• High-Efficient PWM Optimized
• 100 % UIS and Rg Tested
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
D
G
Top View
S
Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)
Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 25
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a, b
Single-Pulse Avalanche Energy
Maximum Power Dissipationa, b
9
IS
L = 0.1 mH
TA = 25 °C
TA = 70 °C
A
2.3
15
EAS
11.25
mJ
2.5
1.3
1.6
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
5.0
40
IAS
PD
V
6.5
7.0
IDM
Pulsed Drain Current (10 µs Pulse Width)
Avalanche Current
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Limits
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typ.
Max.
40
50
70
95
24
30
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
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Si4800BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.8
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
1.8
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltage
a
RDS(on)
VDS ≥ 5 V, VGS = 10 V
30
µA
A
VGS = 10 V, ID = 9 A
0.0155
0.0185
VGS = 4.5 V, ID = 7 A
0.023
0.030
gfs
VDS = 15 V, ID = 9 A
16
VSD
IS = 2.3 A, VGS = 0 V
0.75
1.2
8.7
13
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDS = 15 V, VGS = 5.0 V, ID = 9 A
3.5
0.5
td(on)
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
1.5
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 2.3 A, dI/dt = 100 A/µs
1.4
2.2
7
15
12
20
32
50
14
25
30
60
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72124
S-83039-Rev. H, 29-Dec-08
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 10 thru 5 V
35
4V
TC = - 55 °C
35
25 °C
30
I D - Drain Current (A)
I D - Drain Current (A)
30
25
20
3V
15
10
25
125 °C
20
15
10
5
5
0
0.0
0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
1200
0.040
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1000
0.032
VGS = 4.5 V
0.024
VGS = 10 V
0.016
Ciss
800
600
400
Coss
0.008
200
Crss
0
0.000
0
5
10
15
20
25
0
30
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
1.8
6
VDS = 15 V
ID = 9 A
5
1.6
RDS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
12
4
3
2
VGS = 10 V
ID = 9 A
1.4
1.2
1.0
0.8
1
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
50
r DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.05
TJ = 150 °C
10
0.04
ID = 9 A
0.03
0.02
0.01
TJ = 25 °C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
150
0.2
0.0
Power (W)
V GS(th) Variance (V)
120
ID = 250 µA
- 0.2
90
60
- 0.4
30
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
10-3
150
10-2
TJ - Temperature (°C)
10-1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited
by R DS(on)*
I D - Drain Current (A)
10
1 ms
1
10 ms
0.1
100 ms
1s
10 s
TC = 25 °C
Single Pulse
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 72124
S-83039-Rev. H, 29-Dec-08
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72124.
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000