KSMT452AP KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID -30V 0.065Ω -5A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-223 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -5 Continuous Drain Current-T=100℃ -15 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 3 TJ, TSTG Operating and Storage Junction Temperature Range -66 to +150 ℃ Ratings Units ID A mJ W Thermal Characteristics Symbol Parameter RƟJC Thermal Resistance, Junction to Case1 42 RƟJA Thermal Resistance ,Junction to Ambient1 12 www.kersemi.com ℃/W 1 KSMT452AP KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Package Marking and Ordering Information Part NO. Marking Package KTSMT452AP KSMT452AP SOT-223 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -30 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -1 -1.6 -2.8 V VDS=10V,ID=6A — 0.0 52 0.065 VDS=2.5V,ID=5A — 0.0 75 0.13 VDS=5V,ID=12A — — — — 600 — — 430 — — 160 — — 9 20 — 20 30 — 40 50 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 19 40 Qg Total Gate Charge — 22 30 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 32 — Gate-Drain “Miller” Charge ID=6A — 52 — ns ns ns ns nC nC nC — -0.8 5 -1.2 V — — 100 ns — — — nC td(on) Turn-On Delay Time tr Rise Time Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMT452AP KERSMI ELECTRONIC CO.,LTD. -30V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. Capacitance Characteristics unless otherwise noted Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage www.kersemi.com 3 KSMT452AP KERSMI ELECTRONIC CO.,LTD. -30V Figure 5. Gate Charge Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature P-channel MOSFET Figure 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4