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KSMT452AP
KERSMI ELECTRONIC CO.,LTD.
-30V
P-channel MOSFET
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1)
2)
3)
4)
BVDSS
RDSON
ID
-30V
0.065Ω
-5A
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
SOT-223
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-5
Continuous Drain Current-T=100℃
-15
Pulsed Drain Current2
—
EAS
Single Pulse Avalanche Energy3
—
PD
Power Dissipation4
3
TJ, TSTG
Operating and Storage Junction Temperature
Range
-66 to
+150
℃
Ratings
Units
ID
A
mJ
W
Thermal Characteristics
Symbol
Parameter
RƟJC
Thermal Resistance, Junction to Case1
42
RƟJA
Thermal Resistance ,Junction to Ambient1
12
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℃/W
1
KSMT452AP
KERSMI ELECTRONIC CO.,LTD.
-30V
P-channel MOSFET
Package Marking and Ordering Information
Part NO.
Marking
Package
KTSMT452AP
KSMT452AP
SOT-223
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-30
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-1
-1.6
-2.8
V
VDS=10V,ID=6A
—
0.0
52
0.065
VDS=2.5V,ID=5A
—
0.0
75
0.13
VDS=5V,ID=12A
—
—
—
—
600
—
—
430
—
—
160
—
—
9
20
—
20
30
—
40
50
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
19
40
Qg
Total Gate Charge
—
22
30
Qgs
Gate-Source Charge
VGS=4.5V, VDS=20V,
—
32
—
Gate-Drain “Miller” Charge
ID=6A
—
52
—
ns
ns
ns
ns
nC
nC
nC
—
-0.8
5
-1.2
V
—
—
100
ns
—
—
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMT452AP
KERSMI ELECTRONIC CO.,LTD.
-30V
P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Figure 1. On-Region Characteristics
Figure 3. Capacitance Characteristics
unless otherwise noted
Figure 2. On-Resistance Variation
with Gate Voltage and Drain Current.
Figure 4. On-Resistance Variation vs.
Drain Current and Gate Voltage
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KSMT452AP
KERSMI ELECTRONIC CO.,LTD.
-30V
Figure 5. Gate Charge Characteristics
Figure 7.Breakdown Voltage Variation
vs. Temperature
P-channel MOSFET
Figure 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 8.Maximum Safe Operating Area
Figure 9. Transient Thermal Response Curve
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