UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA06R310M Power MOSFET 9.1A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UNA06R310M is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UNA06R310M is suitable for DC/DC converters. FEATURES * RDS(ON) < 31 mΩ @ VGS=10V, ID=15A RDS(ON) < 45 mΩ @ VGS=4.5V, ID=10A * Low RDS(ON) SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UNA06R310ML-TN3-T UNA06R310MG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-121.b UNA06R310M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150°C) TC=25°C ID 21.4 A Pulsed Drain Current IDM 50 A Continuous Source-Drain Diode Current TC=25°C IS 20.8 A Single Pulse Avalanche Current IAS 25 A Avalanche Energy EAS 16 mJ Maximum Power Dissipation TC=25°C PD 31.25 W Operating Junction Temperature Range TJ -55~150 °C Storage Temperature Range TSTG -55~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.1mH, IAS = 18.1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL RESISTANCE RATINGS (Steady State) PARAMETER Junction to Ambient Junction-to-Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 110 4.0 UNIT °C/W °C/W 2 of 6 QW-R209-121.b UNA06R310M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) PARAMETER STATIC PARAMETERS Drain-Source Breakdown Voltage SYMBOL Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note 1) IGSS BVDSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=70°C VGS=±20V, VDS=0V 60 VDS=VGS, ID=250µA VGS=10V, ID=15A VGS=4.5V, ID=10A VDS=15V, ID=15A 1.0 Forward Transconductance (Note 1) gFS DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG f=1MHz SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate to Source Charge QGS IG=250µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Rise Time tR RG =25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Body Diode Voltage VSD IS=15A, VGS=0V Continuous Source-Drain Diode Current IS TC=25°C Pulse Diode Forward Current (Note 1) ISM IF=15A, dI/dt=100A/µs, Body Diode Reverse Recovery Time trr TJ=25°C Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 20 ±100 3.0 31 45 V µA µA nA 20 V mΩ mΩ S 380 70 51 1.3 pF pF pF Ω 3.2 58 3.5 5.0 32 38 344 96 1.0 22 14 nC nC nC ns ns ns ns 1.5 20.8 80.3 V A A ns nC 3 of 6 QW-R209-121.b UNA06R310M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-121.b UNA06R310M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-121.b UNA06R310M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-121.b