UNISONIC TECHNOLOGIES CO., LTD UTT15N10 Power MOSFET 15A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15N10 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as high current switching applications. FEATURES * RDS(ON) < 125 mΩ @ VGS=10V, ID=7.5A RDS(ON) < 148 mΩ @ VGS=4.5V, ID=7.5A * Low on-state resistance * Built-in gate protection diode * High Switching Speed * High Power and Current Handling Capability SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT15N10L-TM3-T UTT15N10G-TM3-T UTT15N10L-TN3-R UTT15N10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-067.B UTT15N10 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 15 A Avalanche Energy Single Pulsed EAS 10 mJ Peak Diode Recovery dv/dt dv/dt 10 V/ns Power Dissipation PD 34.7 W Junction Temperature TJ 150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=0.08mH, IAS=15A, VDD=50V, RG=25Ω, Starting TJ=25°С 4. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL θJA θJC Junction to Ambient Junction to Case RATINGS 125 4.17 UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=100V, VGS=0V VDS=0V, VGS=±20V 100 VGS(TH) VDS=10V, ID=1mA VGS=10V, ID=7.5A VGS=4.5V, ID=7.5A 2.0 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS=10V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=80V, ID=15A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, VDS=30V, ID=7.5A RG=0Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IF=16A ,VGS=0V Maximum Continuous Drain-Source IS VGS=0V Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Repetitive Forward Current Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating ambient temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP 100 110 MAX UNIT 10 ±10 V µA µA 4.0 125 148 V mΩ mΩ 900 110 50 pF pF pF 20 3 5 9 5 30 4 nC nC nC ns ns ns ns 1.0 V 15 A 60 A 2 of 5 QW-R209-067.B UTT15N10 Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 3 of 5 QW-R209-067.B UTT15N10 Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R209-067.B UTT15N10 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-067.B