UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N03H-H Power MOSFET 20A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT60N03H-H is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low CRSS and low gate charge. The UTC UTT60N03H-H is suitable for high power density DC/DC and embedded DC/DC applications. FEATURES * RDS(ON) < 5.5mΩ @ VGS=10V, ID=10A RDS(ON) < 8.5mΩ @ VGS=4.5, ID=8A * High switching speed * Low CRSS * Low gate change SYMBOL ORDERING INFORMATION Ordering Number Note: UTT60N03HG-K08-5060-R Pin Assignment: G: Gate D: Drain UTT60N03HG-K08-5060-R Package DFN-8(5×6) S: Source 1 S 2 S Pin Assignment 3 4 5 6 7 S G D D D (1)Packing Type (1) R: Tape Reel (2)Package Type (2) K08-5060: DFN-8(5×6) (3)Green Package G: Halogen Free and Lead Free 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-046.a UTT60N03H-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS +20, -16 V Drain Current Continuous TC=25°C ID 20 (Note 6) A (TJ=150°C) 80 A Pulsed (t=300us) IDM Continuous Source-Drain Diode TC=25°C 14.1 (Note 6) A IS Current 3.2 (Note 2, 3) TA=25°C Avalanche Current (L=0.1mH) IAR 15 A Single Pulsed Avalanche Energy (L=0.1mH) EAS 11.25 mJ Power Dissipation TC=25°C PD 31.2 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Soldering Recommendations (Peak Temperature) 260 °C (Note 4) Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 2, 5) t≤10s θJA 34 °C/W Junction to Case (Drain) Steady State θJC 4 °C/W Notes: 1. Based on TC=25°C 2. Surface mounted on 1"x1" FR4 board. 3. t=10s 4. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. 5. Maximum under steady state conditions is 70°C/W 6. Package limited UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw QW-R209-046.a UTT60N03H-H Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(TH) Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 1) On State Drain Current DYNAMIC PARAMETERS (Note 2) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge SYMBOL TEST CONDITIONS BVDSS ID=250µA, VGS=0V △VDS/TJ ID=250uA △VGS(TH)/TJ VDS=30V, VGS=0V IDSS VDS=30V, VGS=0V, TJ=55°C VGS=+20V, VDS=0V IGSS VGS=-16V, VDS=0V VGS(TH) RDS(ON) ID(ON) CISS COSS CRSS QG VDS=VGS, ID=250µA VGS=10V, ID=10A VGS=4.5V, ID=8A VDS≥5V, VGS=10V TYP MAX 30 1.1 mV/°C 1 10 +100 -100 µA µA nA nA 2.2 5.5 8.5 V 30 0.4 mΩ A 1450 445 38 VGS=10V, VDS=15V, ID=10A UNIT V 20 -4.6 VGS=0V, VDS=15V, f=1MHz VGS=4.5V, VDS=15V, ID=10A Gate to Source Charge QGS Gate to Drain Charge QGD Gate Resistance RG f=1MHz Turn-ON Delay Time tD(ON) Rise Time tR VDD=15V, ID≈10A, RL=1.5Ω, V Turn-OFF Delay Time tD(OFF) GEN=10V, RG=1Ω Fall-Time tF Turn-ON Delay Time tD(ON) Rise Time tR VDD=15V, ID≈10A, RL=1.5Ω, VGEN=4.5V, RG=1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TC=25°C Maximum Body-Diode Pulsed Current ISM (Note 1) Drain-Source Diode Forward Voltage VSD IS=3A Body Diode Reverse Recovery Time tRR Body Diode Reverse Recovery Charge QRR IF=10A, dI/dt=100A/µs, TJ=25°C Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Notes: 1. Pulse test; pulse width ≤30µs, duty cycle ≤2% 2. Guaranteed by design, not subject to production testing UNISONIC TECHNOLOGIES CO., LTD MIN 19.4 9.4 4 1.8 1.65 9 8 18 8 15 12 18 9 0.76 24 14 12 12 pF pF pF 29 14 nC nC 3.3 18 16 36 16 30 24 36 18 nC Ω ns ns ns ns ns ns ns ns 14.1 A 80 A 1.1 48 28 V ns nC ns ns 3 of 5 www.unisonic.com.tw VQW-R209-046.a UTT60N03H-H Preliminary UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 4 of 5 www.unisonic.com.tw VQW-R209-046.a UTT60N03H-H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw VQW-R209-046.a