UNISONIC TECHNOLOGIES CO., LTD 7N60A Power MOSFET 7A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high efficiency switch mode power supply. FEATURES * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 28 nC ) * Low reverse transfer Capacitance (CRSS= typical 12 pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60AL-TA3-T 7N60AG-TA3-T 7N60AL-TF1-T 7N60AG-TF1-T 7N60AL-TF3-T 7N60AG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 7N60AL-TA3-T (1)Packing Type (2)Package Type (1) T: Tube (3)Lead Free (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd (2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F 1 of 7 VQW-R502-111,F 7N60A Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7 A Continuous Drain Current ID 7 A Pulsed Drain Current (Note 2) IDM 28 A 330 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ TO-220 65 Power Dissipation PD W TO-220F/TO-220F1 30 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ(MAX) 3. L = 12.05mH, IAS = 7.4A, VDD=50V, RG = 27 Ω, Starting TJ = 25°C THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220 TO-220F/TO-220F1 TO-220 TO-220F/TO-220F1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 83.3 62.5 1.92 4.16 UNIT °C/W °C/W 2 of 7 VQW-R502-111,F 7N60A Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS = 0V, ID = 250μA VDS = 600V, VGS = 0V VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.5A (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS VDS=25V, VGS=0V, f=1.0 MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD=300V, ID =7A, RG =25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=300V, ID=7A, VGS=10 V Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 7A, dIF / dt = 100A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 2.0 0.93 10 100 -100 V µA nA nA 4.0 1.2 V Ω 950 1430 85 130 12 18 pF pF pF 16 60 80 65 28 5.5 11 42 8.3 17 ns ns ns ns nC nC nC 1.4 V 7 A 28 A 365 4.23 ns µC 3 of 7 VQW-R502-111,F 7N60A Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 VQW-R502-111,F 7N60A Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% tD(ON) Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2μF tF Switching Waveforms Same Type as D.U.T. 50kΩ tD(OFF) tR QG 10V 0.3μF QGS VDS QGD VGS DUT 1mA VGS Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 7 VQW-R502-111,F 7N60A Power MOSFET Drain Current, ID (A) Drain Current, ID (A) TYPICAL CHARACTERISTICS Reverse Drain Current vs. Source Drain Voltage ON Resistance vs. Drain Current Note: 1. Td=25°C 2.0 2. Pulsed test Reverse Drain Current, IS (A) ON Resistance, RDS(ON) (Ω) 2.5 VGS=10V 1.5 VGS=20V 1.0 0.8 0 0 5 10 15 20 Note: 1. VDS=10V 2. Pulse test 101 100 10-1 0.4 25 0.6 Drain Current, ID (A) 0.8 Capacitance vs. Drain Source Voltage Gate Source Voltage, VGS (V) Capacitance (pF) CISS COSS 100 10 Note: 1. VGS: 0V 2. f = 1MHz 3. TC = 25°C 1 1 0.1 1.4 Gate Source Voltage vs. Total Gate Charge 10000 1000 8 1.2 1.0 Source Drain Voltage, VSD (V) CRSS Note: 1. ID = 7A 2. TC = 25°C 10 VDD = 80V VDD = 300V VDD = 200V 5 0 10 100 Drain Source Voltage, VDS (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 10 15 20 30 25 35 Total Gate Charge, QG (nC) 6 of 7 VQW-R502-111,F 7N60A Power MOSFET TYPICAL CHARACTERISTICS (Cont.) Note: 1. VGS = 0V 2. ID = 250µA 1.1 1.0 0.9 0.8 -50 -25 0 ON-Resistance vs. Junction Temperature Note: 1. VGS = 10V 2.5 2. ID = 3.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Drain Current, ID (A) Drain Current, ID (A) 3.0 1m s VDSS MAX 1.2 Drain-Source Voltage vs. Junction Temperature ON-Resistance, RDS(ON) (Normalized) Drain-Source Voltage, VDSS (Normalized) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 VQW-R502-111,F