UTC-IC 7N60AL-X-TF1-T

UNISONIC TECHNOLOGIES CO., LTD
7N60A
Power MOSFET
7 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
„
DESCRIPTION
The UTC 7N60A is a high voltage N-Channel enhancement
mode power field effect transistors and is designed to have
minimize on-state resistance , provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. This power MOSFET is well suited for
high efficiency switch mode power supply.
„
FEATURES
* RDS(ON) = 1.2Ω @VGS = 10 V
* Ultra low gate charge (typical 28 nC )
* Low reverse transfer Capacitance (CRSS= typical 12 pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
„
Lead-free:
7N60AL
Halogen-free: 7N60AG
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
7N60AL-x-TA3-T
7N60AG-x-TA3-T
7N60AL-x-TF1-T
7N60AG-x-TF1-T
7N60AL-x-TF3-T
7N60AG-x-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2009 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
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VQW-R502-111,D
7N60A
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
7N60A-A
600
V
Drain-Source Voltage
VDSS
7N60A-B
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7
A
Continuous Drain Current
ID
7
A
Pulsed Drain Current (Note 2)
IDM
28
A
Single Pulsed (Note 3)
EAS
330
mJ
Avalanche Energy
7.5
mJ
Repetitive (Note 2)
EAR
TO-220
65
W
Power Dissipation
PD
TO-220F/TO-220F1
30
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ(MAX)
3. L = 12.05mH, IAS = 7.4A, VDD=50V, RG = 27 Ω, Starting TJ = 25°C
„
THERMAL DATA
Junction to Ambient
Junction to Case
„
PARAMETER
TO-220
TO-220F/TO-220F1
TO-220
TO-220F/TO-220F1
SYMBOL
θJA
θJA
θJC
θJC
RATINGS
83.3
62.5
1.92
4.16
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
7N60A-A
7N60A-B
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.5A (Note 4)
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
600
650
VDS = 600V, VGS = 0V
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(TH)
RDS(ON)
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
MIN TYP MAX UNIT
VDD=300V, ID =7A, RG =25Ω
(Note 1, 2)
VDS=300V, ID=7A, VGS=10 V
(Note 1, 2)
2.0
1.0
10
100
-100
V
V
µA
nA
nA
4.0
1.2
V
Ω
950 1430
85 130
12
18
pF
pF
pF
16
60
80
65
28
5.5
11
ns
ns
ns
ns
nC
nC
nC
42
8.3
17
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VQW-R502-111,D
7N60A
„
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 7A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
VGS = 0V, IS = 7A,
Reverse Recovery Time
tRR
dIF / dt = 100A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
365
4.23
1.4
V
7
A
28
A
ns
µC
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VQW-R502-111,D
7N60A
„
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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VQW-R502-111,D
7N60A
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
„
Fig. 2A Switching Test Circuit
Same Type
as D.U.T.
50kΩ
12V
0.2µF
Fig. 2B Switching Waveforms
QG
10V
0.3µF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
IAS
RD
10V
VDD
D.U.T.
ID(t)
VDS(t)
VDD
tp
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Fig. 4B Unclamped Inductive Switching Waveforms
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VQW-R502-111,D
7N60A
Power MOSFET
Drain Current, ID (A)
Drain Current, ID (A)
TYPICAL CHARACTERISTICS
„
Reverse Drain Current vs.
Source Drain Voltage
ON Resistance vs. Drain Current
Note:
1. Td=25°C
2.0 2. Pulsed test
Reverse Drain Current, IS (A)
ON Resistance, RDS(ON) (Ω)
2.5
VGS=10V
1.5
VGS=20V
1.0
0.8
0
0
5
10
15
20
Note:
1. VDS=10V
2. Pulse test
101
100
10-1
0.4
25
0.6
Drain Current, ID (A)
0.8
Capacitance vs. Drain Source Voltage
Gate Source Voltage, VGS (V)
Capacitance (pF)
CISS
COSS
100
10 Note:
1. VGS: 0V
2. f = 1MHz
3. TC = 25°C
1
1
0.1
1.4
Gate Source Voltage vs. Total Gate Charge
10000
1000
8 1.2
1.0
Source Drain Voltage, VSD (V)
CRSS
Note:
1. ID = 7A
2. TC = 25°C
10
VDD = 80V
VDD = 300V
VDD = 200V
5
0
10
100
Drain Source Voltage, VDS (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5
10
15
20
30
25
35
Total Gate Charge, QG (nC)
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VQW-R502-111,D
7N60A
Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Note:
1. VGS = 0V
2. ID = 250µA
1.1
1.0
0.9
0.8
-50 -25 0
ON-Resistance vs. Junction Temperature
Note:
1. VGS = 10V
2.5 2. ID = 3.5A
2.0
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150 175
Junction Temperature, TJ (°C)
25 50 75 100 125 150 175
Junction Temperature, TJ (°C)
Drain Current, ID (A)
Drain Current, ID (A)
3.0
1m
s
VDSS MAX
1.2
Drain-Source Voltage vs.
Junction Temperature
ON-Resistance, RDS(ON) (Normalized)
Drain-Source Voltage, VDSS (Normalized)
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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VQW-R502-111,D