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KSMT613P
KERSMI ELECTRONIC CO.,LTD.
-60V
P-channel MOSFET
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
-60V
RDSON
ID
0.13Ω
-2.9A
1)
2)
Low gate charge.
Green device available.
3)
4)
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
SOT-223
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-60
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-2.9
Continuous Drain Current-T=100℃
-2.3
Pulsed Drain Current2
—
EAS
Single Pulse Avalanche Energy3
150
PD
Power Dissipation4
1.8
TJ, TSTG
Operating and Storage Junction Temperature
-55 to
Range
+1150
ID
A
mJ
W
℃
Thermal Characteristics
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance, Junction to Case1
—
RƟJA
Thermal Resistance ,Junction to Ambient1
—
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Units
℃/W
1
KSMT613P
KERSMI ELECTRONIC CO.,LTD.
-60V
P-channel MOSFET
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMT613P
KSMT613P
SOT-223
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-60
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±
v
μA
nA
VDS=VDS, ID=250μA
—
—
—
V
VDS=10V,ID=6A
—
0.11
0.13
VDS=2.5V,ID=5A
—
—
—
VDS=2,ID=2.9
2.7
5.4
—
—
715
875
—
230
295
—
90
120
—
6.7
17
—
9
18
—
26
52
—
7
19
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
—
2.5
3.8
Gate-Source Charge
VGS=4.5V, VDS=20V,
—
8.9
14.3
Gate-Drain “Miller” Charge
ID=6A
—
22
33
ns
ns
ns
ns
nC
nC
nC
—
-3.9
—
V
—
37.2
79
ns
—
59.8
112
nC
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
Notes:
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2
KSMT613P
KERSMI ELECTRONIC CO.,LTD.
-60V
P-channel MOSFET
1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
unless otherwise noted
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3
KSMT613P
KERSMI ELECTRONIC CO.,LTD.
-60V
www.kersemi.com
P-channel MOSFET
4