参数PDF下载

KSM3401
KERSMI ELECTRONIC CO.,LTD.
-30V
P--channel MOSFET
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
-30V
1)
2)
3)
4)
RDSON
ID
-4.2A
50MΩ
Low gate charge.
Green device available.
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
SOT-23
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-4.2
Continuous Drain Current-T=100℃
-3.5
Pulsed Drain Current2
—
EAS
Single Pulse Avalanche Energy3
—
PD
Power Dissipation4
1.4
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
150
ID
A
mJ
W
℃
Thermal Characteristics
www.kersemi.com
1
KSM3401
KERSMI ELECTRONIC CO.,LTD.
-30V
P--channel MOSFET
Symbol
Parameter
Ratings
RƟJC
Thermal Resistance, Junction to Case1
90
RƟJA
Thermal Resistance ,Junction to Ambient1
125
Units
℃/W
Package Marking and Ordering Information
Part NO.
Marking
Package
KSM3401
KSM3401
SOT-23
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-30
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VDS=0V
—
—
-1
IGSS
Gate-Source Leakage Current
VDS=V, VDS=±12A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-0.7
-1
-1.3
V
VDS=10V,ID=6A
—
—
75
VDS=2.5V,ID=5A
—
53
65
VDS=5V,ID=12A
7
11
—
—
954
—
—
115
—
—
77
—
—
6.3
—
—
3.2
—
—
38.2
—
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
MΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
12
—
Qg
Total Gate Charge
—
9.4
—
Qgs
Gate-Source Charge
VGS=4.5V, VDS=20V,
—
2
—
Gate-Drain “Miller” Charge
ID=6A
—
3
—
ns
ns
ns
ns
nC
nC
nC
—
—
-2.2
V
—
20.2
—
ns
—
11.2
—
nC
td(on)
Turn-On Delay Time
tr
Rise Time
Qgd
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=4A,di/dt=100A/μS
www.kersemi.com
2
KSM3401
KERSMI ELECTRONIC CO.,LTD.
-30V
P--channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
unless otherwise noted
www.kersemi.com
3
KSM3401
KERSMI ELECTRONIC CO.,LTD.
-30V
www.kersemi.com
P--channel MOSFET
4