KSM3401 KERSMI ELECTRONIC CO.,LTD. -30V P--channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS -30V 1) 2) 3) 4) RDSON ID -4.2A 50MΩ Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOT-23 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -4.2 Continuous Drain Current-T=100℃ -3.5 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 1.4 TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM3401 KERSMI ELECTRONIC CO.,LTD. -30V P--channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance, Junction to Case1 90 RƟJA Thermal Resistance ,Junction to Ambient1 125 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSM3401 KSM3401 SOT-23 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -30 — — IDSS Zero Gate Voltage Drain Current VDS=24V, VDS=0V — — -1 IGSS Gate-Source Leakage Current VDS=V, VDS=±12A — — ±100 v μA nA VDS=VDS, ID=250μA -0.7 -1 -1.3 V VDS=10V,ID=6A — — 75 VDS=2.5V,ID=5A — 53 65 VDS=5V,ID=12A 7 11 — — 954 — — 115 — — 77 — — 6.3 — — 3.2 — — 38.2 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance MΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 12 — Qg Total Gate Charge — 9.4 — Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 2 — Gate-Drain “Miller” Charge ID=6A — 3 — ns ns ns ns nC nC nC — — -2.2 V — 20.2 — ns — 11.2 — nC td(on) Turn-On Delay Time tr Rise Time Qgd VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=4A,di/dt=100A/μS www.kersemi.com 2 KSM3401 KERSMI ELECTRONIC CO.,LTD. -30V P--channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted www.kersemi.com 3 KSM3401 KERSMI ELECTRONIC CO.,LTD. -30V www.kersemi.com P--channel MOSFET 4