Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2NM60-Q
Power MOSFET
2.0A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET
1
1

TO-220F1
DESCRIPTION
The UTC 2NM60-Q is a Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.

1
SOT-223
FEATURES
TO-251
1
TO-252
* RDS(ON) < 3.1Ω @ VGS = 10V, ID =1.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2NM60G-AA3-R
2NM60L-TF1-T
2NM60G-TF1-T
2NM60L-TM3-T
2NM60G-TM3-T
2NM60L-TN3-R
2NM60G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
SOT-223
TO-220F1
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tube
Tape Reel
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QW-R205-134.b
2NM60-Q

Power MOSFET
MARKING
SOT-223
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TO-220F1/TO-251/TO-252
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2NM60-Q

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
2.0
A
Continuous
ID
2.0
A
Drain Current
8.0
A
Pulsed (Note 2)
IDM
Avalanche Current (Note 2)
IAR
2.4
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
29
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.0
V/ns
SOT-223
3.3
W
Power Dissipation
PD
TO-220F1
2.4
W
TO-251/TO-252
44
W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=2.4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL CHARACTERISTICS
PARAMETER
SOT-223
Junction to Ambient
TO-220F1
TO-251/TO-252
SOT-223
Junction to Case
TO-220F1
TO-251/TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATINGS
150
62.5
100
38
5.2
2.8
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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2NM60-Q

Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
Gate Threold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID =1A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A
Gate to Source Charge
QGS
IG=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 1)
tD (ON)
VDD=30V, VGS=10V, ID =0.5A,
Rise Time
tR
RG =25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=2.0A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
trr
IS=2.0A, VGS=0V,
dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
2.5
10
100
-100
V
μA
nA
nA
4.5
3.1
V
Ω
128
95
11
pF
pF
pF
24
3.2
5.2
36
42
70
25
nC
nC
nC
ns
ns
ns
ns
2.0
8.0
1.4
195
1.1
A
A
V
nS
μC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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2NM60-Q

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
200
150
100
50
200
150
100
50
0
0
0
300
0
150
450
600 750
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
Drain-Source Diode Forword Current vs.
Source to Drain Voltage
2.4
Drain Current, ID (A)
VGS=10V, ID=1A
0.8
0.6
0.4
0.2
0
0
0.7 1.4
2.1 2.8 3.5 4.2
Drain to Source Voltage, VDS (V)
Drain-Source Diode Forword
Current, ISD (A)
1.2
1.0
0.6
1.2
1.8 2.4 3.0 3.6
Gate Threshold Voltage, VTH (V)
2.0
1.6
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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