UNISONIC TECHNOLOGIES CO., LTD UF830K-TC Preliminary Power MOSFET 4.5A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF830K-TC is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * RDS(ON) < 1.65Ω @ VGS = 10V, ID = 2.5 A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830KL-TA3-T UF830KG-TA3-T UF830KL-TF1-T UF830KG-TF1-T UF830KL-TF2-T UF830KG-TF2-T UF830KL-TF3-T UF830KG-TF3-T UF830KL-TM3-T UF830KG-TM3-T UF830KL-TN3-R UF830KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R205-112.b UF830K-TC Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-112.b UF830K-TC Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless Otherwise Specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RG=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage VGS ±30 V Continuous ID 4.5 A Drain Current Pulsed IDM 18 A Peak Diode Recovery dv/dt (Note 3) dv/dt 2 V/ns TO-220 73 W TO-220F/TO-220F1 38 W Power Dissipation PD TO-220F2 40 W TO-251/TO-252 46 W Single Pulse Avalanche Energy Rating (Note 2) EAS 110 mJ Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 10mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220/TO-220F TO-220F1/TO-220F2 TO-251/TO-252 TO-220 TO-220F/TO-220F1 TO-220F2 TO-251/TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATING 62.5 100.3 1.71 3.31 3.125 2.7 UNIT °C/W °C/W 3 of 7 QW-R205-112.b UF830K-TC Preliminary Power MOSFET ELECTRICAL SPECIFICATIONS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 500 Drain-Source Leakage Current IDSS VDS= Rated BVDSS, VGS=0V Gate-Source Leakage Current IGSS VGS=±30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS=VDS, ID=250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) ID=2.5A, VGS=10V DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS IG= 100μA (Note1, 2) Gate-Drain Charge QGD Turn-On Delay Time (Note 1) tD(ON) VDS=30V, VGS=10V, ID=0.5A, Turn-On Rise Time tR R Turn-Off Delay Time tD(OFF) G=25Ω (Note1, 2) Turn-Off Fall Time tF SOURCE TO DRAIN DIODE SPECIFICATIONS Continuous Source to Drain Current IS (Note 4) Pulse Source to Drain Current ISD Source to Drain Diode Voltage (Note 1) VSD ISD=4.5A, VGS=0V Reverse Recovery Time (Note 1) trr ISD=4.5A, VGS=0V, dIF / dt =100A/μs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%. 2. MOSFET Switching Times are Essentially Independent of Operating Temperature. 3. Gate Charge is Essentially Independent of Operating Temperature. 4. Modified MOSFET symbol showing the integral reverse P-N junction diode as below. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 25 ±100 V μA nA 4.0 1.65 V Ω 267 64 7 pF pF pF 41 4 4 44 49 268 79 nC nC nC ns ns ns ns 4.5 18 1.6 250 1.0 A A V nS μC 4 of 7 QW-R205-112.b UF830K-TC Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-112.b UF830K-TC Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-112.b UF830K-TC Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-112.b