RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet April 1995 File Number 3665.1 50A, 700V - 1000V Hyperfast Diodes Features RHRU5070, RHRU5080, RHRU5090 and RHRU50100 (TA49066) are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<75ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Planar Construction • Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V • Avalanche Energy Rated Applications • Switching Power Supplies • Power Switching Circuits Ordering Information • General Purpose PACKAGING AVAILABILITY PART NUMBER PACKAGE Package BRAND RHRU5070 TO-218 RHRU5070 RHRU5080 TO-218 RHRU5080 RHRU5090 TO-218 RHRU5090 RHRU50100 TO-218 RHRU50100 JEDEC STYLE TO-218 ANODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RHRU5070 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 700 Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 700 DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 700 Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 50 (TC = +65oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 100 (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM 500 (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 40 Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . TSTG , TJ -65 to +175 1 RHRU5080 800 800 800 50 RHRU5090 RHRU50100 UNITS 900 1000 V 900 1000 V 900 1000 V 50 50 A 100 100 100 A 500 500 500 A 150 40 -65 to +175 150 40 -65 to +175 150 40 -65 to +175 W mj oC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 RHRU5070, RHRU5080, RHRU5090, RHRU50100 Electrical Specifications TC = +25oC, Unless Otherwise Specified RHRU5070 SYMBOL RHRU5090 RHRU50100 MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS IF = 50A, TC = +25oC - - 3.0 - - 3.0 - - 3.0 - - 3.0 V IF = 50A, TC = +150oC - - 2.5 - - 2.5 - - 2.5 - - 2.5 V VR = 700V, TC = +25oC - - 500 - - - - - - - - - µA VR = 800V, TC = +25oC VR = 900V, TC = +25oC - - - - - 500 - - - - - - µA - - - - - - - - 500 - - - µA VR = 1000V, TC = +25oC - - - - - - - - - - - 500 µA VR = 700V, TC = +150oC VR = 800V, TC = +150oC - - 3.0 - - - - - - - - - mA - - - - - 3.0 - - - - - - mA VR = 900V, TC = +150oC - - - - - - - - 3.0 - - - mA VR = 1000V, TC = +150oC - - - - - - - - - - - 3.0 mA IF = 1A, dIF /dt = 100A/µs - - 75 - - 75 - - 75 - - 75 ns IF = 50A, dIF /dt = 100A/µs - - 95 - - 95 - - 95 - - 95 ns tA IF = 50A, dIF /dt = 100A/µs - 54 - - 54 - - 54 - - 54 - ns tB IF = 50A, dIF /dt = 100A/µs - 32 - - 32 - - 32 - - 32 - ns QRR IF = 50A, dIF /dt = 100A/µs - 125 - - 125 - - 125 - - 125 - nC VR = 10V, IF = 0A - 150 - - 150 - - 150 - - 150 - pF 1.0 oC/W VF IR IR tRR CJ TEST CONDITION RHRU5080 RθJC - - 1.0 - - 1.0 - - 1.0 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (Figure 2), summation of tA + tB . tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figure 10 and Figure 11). pw = Pulse width. D = Duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF /dt L1 = SELF INDUCTANCE OF R1 R4 + LLOOP Q1 +V1 +V3 t1 ≥ 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) ≤ R4 10 Q2 0 IF L LOOP t2 tRR tA tB 0 R2 t1 dIF dt Q4 DUT 0.25 IRM IRM t3 R4 C1 0 Q3 -V2 -V4 R3 VR VRM FIGURE 1. tRR TEST CIRCUIT 2 FIGURE 2. WAVEFORMS AND DEFINITIONS RHRU5070, RHRU5080, RHRU5090, RHRU50100 Typical Performance Curves 3000 250 +175oC IR , REVERSE CURRENT - (µA) IF, FORWARD CURRENT - (A) 1000 100 +175oC +100oC +25oC 10 1 0 0.5 1 1.5 2 3 2.5 3.5 100 +100oC 10 1 +25oC 0.1 0.01 4 0 200 VF, FORWARD VOLTAGE - (V) 1000 tRR 60 tA 40 tB 10 TC = +100oC 200 t, RECOVERY TIMES - (ns) t, RECOVERY TIMES - (ns) 800 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE TC = +25oC 80 600 VR , REVERSE VOLTAGE - (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 100 400 tRR 150 100 tA tB 50 0 0 1 1 50 10 50 10 IF, FORWARD CURRENT - (A) IF , FORWARD CURRENT - (A) FIGURE 5. TYPICAL tRR , tA AND tB CURVES vs FORWARD CURRENT AT +25oC FIGURE 6. TYPICAL tRR , tA AND tB CURVES vs FORWARD CURRENT AT +100oC t, RECOVERY TIMES - (ns) 300 tRR 200 tA 100 tB 0 1 10 50 IF , FORWARD CURRENT - (A) FIGURE 7. TYPICAL tRR , tA AND t B CURVES vs FORWARD CURRENT AT +175oC 3 IF (AV) , AVERAGE FORWARD CURRENT - (A) TC = +175oC 400 50 40 DC 30 SQ. WAVE 20 10 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE - (oC) FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES RHRU5070, RHRU5080, RHRU5090, RHRU50100 Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 500 400 300 200 100 0 0 50 150 100 200 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE Test Circuit and Waveforms IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI 2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETS R L Q1 + 1MΩ 130Ω VAVL DUT VDD 12V Q2 IL CURRENT SENSE 130Ω - I V t0 12V FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. 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