Data Sheet

PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
11 December 2012
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4021PX.
2. Features and benefits
•
•
•
•
•
•
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
3. Applications
•
•
•
•
•
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
20
V
IC
collector current
-
-
7
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
15
A
RCEsat
collector-emitter
saturation resistance
IC = 5 A; IB = 500 mA; pulsed;
-
19
28
mΩ
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
E
emitter
2
C
collector
3
B
base
Simplified outline
Graphic symbol
2
3
3
2
1
1
sym042
SOT89
6. Ordering information
Table 3.
Ordering information
Type number
Package
PBSS4021NX
Name
Description
Version
SOT89
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PBSS4021NX
%6D
[1]
% = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
20
V
VCEO
collector-emitter voltage
open base
-
20
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
7
A
ICM
peak collector current
-
15
A
IB
base current
-
1
A
Ptot
total power dissipation
[1]
-
600
mW
[2]
-
1650
mW
[3]
-
2500
mW
PBSS4021NX
Product data sheet
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
Symbol
Parameter
Tj
Min
Max
Unit
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
Conditions
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aac174
3.0
Ptot
(W)
(1)
2.0
(2)
1.0
(3)
0.0
- 75
- 25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Fig. 1.
2
Power derating curves
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
Conditions
in free air
thermal resistance
from junction to solder
point
[1]
[2]
[3]
PBSS4021NX
Product data sheet
Min
Typ
Max
Unit
[1]
-
-
210
K/W
[2]
-
-
75
K/W
[3]
-
-
50
K/W
-
-
20
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
006aac175
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.33
0.5
0.2
0.1
0.05
10
0.02
0.01
0
1
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
006aac176
duty cycle = 1
Zth(j-a)
(K/W)
0.5
10
0.75
0.33
0.2
0.1
0.05
0.02
1
0.01
10- 1
10- 5
0
10- 4
10- 3
10- 2
FR4 PCB, mounting pad for collector 6 cm
Fig. 3.
10- 1
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4021NX
Product data sheet
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
102
006aac177
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
10
0.33
0.2
0.1
0.05
1
0.01
10- 1
10- 5
0.02
0
10- 4
10- 3
10- 2
10- 1
1
102
10
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 20 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 20 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
ICES
collector-emitter cut-off VCE = 16 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 2 V; IC = 500 mA; pulsed;
300
550
-
300
550
-
300
500
-
250
450
-
100
200
-
-
25
38
mV
-
35
60
mV
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 8 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 10 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
PBSS4021NX
Product data sheet
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IC = 2 A; IB = 40 mA; pulsed;
-
48
75
mV
-
78
120
mV
-
85
140
mV
-
137
210
mV
-
19
28
mΩ
-
0.82
0.9
V
-
0.92
1.05
V
-
0.74
0.85
V
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 4 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 4 A; IB = 40 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 7 A; IB = 350 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
RCEsat
VBEsat
collector-emitter
saturation resistance
IC = 5 A; IB = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter saturation IC = 1 A; IB = 100 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 4 A; IB = 400 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
td
delay time
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
-
40
-
ns
tr
rise time
IBoff = -0.05 A; Tamb = 25 °C
-
40
-
ns
ton
turn-on time
-
80
-
ns
ts
storage time
-
650
-
ns
tf
fall time
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
-
75
-
ns
toff
turn-off time
IBoff = -0.05 A; Tamb = 25 °C
-
725
-
ns
fT
transition frequency
VCE = 10 V; IC = 100 mA; f = 100 MHz;
-
115
-
MHz
-
85
-
pF
δ ≤ 0.02 ; Tamb = 25 °C
Tamb = 25 °C
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
PBSS4021NX
Product data sheet
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
006aac178
1000
16.0
hFE
IC
(A)
800
006aac179
IB (mA) = 70
63
12.0
(1)
56
49
42
35
28
600
(2)
21
8.0
14
400
(3)
0
10- 1
1
10
102
103
0.0
0.0
104
105
IC (mA)
VCE = 2 V
1.0
2.0
3.0
4.0
5.0
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 6.
(2) Tamb = 25 °C
Collector current as a function of collectoremitter voltage; typical values
(3) Tamb = −55 °C
Fig. 5.
7
4.0
200
DC current gain as a function of collector
current; typical values
006aac180
1.2
006aac181
1.4
VBE
(V)
VBEsat
(V)
0.8
1.0
(1)
(1)
(2)
0.0
10- 1
Fig. 7.
(2)
(3)
0.4
1
10
0.6
102
103
0.2
10- 1
104
105
IC (mA)
(3)
1
10
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
PBSS4021NX
Product data sheet
Fig. 8.
103
104
105
IC (mA)
Base-emitter saturation voltage as a function of
collector current; typical values
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
006aac182
1
006aac183
1
VCEsat
(V)
VCEsat
(V)
10- 1
10- 1
(1)
(2)
10- 2
(3)
(1)
(2)
10- 2
10- 3
10- 3
10- 1
Fig. 9.
1
102
10
103
10- 4
10- 1
104
105
IC (mA)
(3)
1
10
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
006aac184
102
102
103
104
105
IC (mA)
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac185
103
RCEsat
(Ω)
RCEsat
(Ω)
102
10
10
(1)
1
1
(2)
(1)
(2)
10- 1
10- 2
10- 1
10- 1
(3)
1
10
102
10- 2
10- 1
103
104
IC (mA)
(3)
1
10
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4021NX
Product data sheet
102
103
104
105
IC (mA)
Fig. 12. Collector-emitter saturation resistance as a
function of collector current; typical values
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
11. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig. 13. BISS transistor switching time definition
VBB
RB
(probe)
oscilloscope
450 Ω
VCC
RC
Vo
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mlb826
Fig. 14. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBSS4021NX
Product data sheet
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
12. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1
0.53
0.40
1.5
2
1.2
0.8
3
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig. 15. Package outline SOT89
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
0.85
solder lands
1.7
1.2
4.6
solder resist
0.5
1
(3×)
4.85
1.1
(2×)
1.5
solder paste
occupied area
Dimensions in mm
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 16. Reflow soldering footprint for SOT89
PBSS4021NX
Product data sheet
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
(2×)
Dimensions in mm
preferred transport direction during soldering
1.9
1.5
(2×)
1.9
0.7
5.3
sot089_fw
Fig. 17. Wave soldering footprint for SOT89
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4021NX v.3
20121211
Product data sheet
-
PBSS4021NX v.2
Modifications:
•
PBSS4021NX v.2
20121009
Product data sheet
-
PBSS4021NX v.1
PBSS4021NX v.1
20100401
Product data sheet
-
-
PBSS4021NX
Product data sheet
Editorial update
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PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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with the same product type number(s) and title. A short data sheet is
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consequences of use of such information. NXP Semiconductors takes no
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PBSS4021NX
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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applications. Unless otherwise agreed in writing, the product is not designed,
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product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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PBSS4021NX
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20 V, 7 A NPN low VCEsat (BISS) transistor
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
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Corporation.
PBSS4021NX
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 December 2012
© NXP B.V. 2012. All rights reserved
13 / 14
PBSS4021NX
NXP Semiconductors
20 V, 7 A NPN low VCEsat (BISS) transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................3
10
Characteristics ....................................................... 5
11
11.1
Test information ..................................................... 9
Quality information .........................................
12
Package outline ................................................... 10
13
Soldering .............................................................. 10
14
Revision history ................................................... 11
15
15.1
15.2
15.3
15.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2012
PBSS4021NX
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 December 2012
© NXP B.V. 2012. All rights reserved
14 / 14