PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor 11 December 2012 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX. 2. Features and benefits • • • • • • Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 3. Applications • • • • • Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current - - 7 A ICM peak collector current single pulse; tp ≤ 1 ms - - 15 A RCEsat collector-emitter saturation resistance IC = 5 A; IB = 500 mA; pulsed; - 19 28 mΩ tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 C collector 3 B base Simplified outline Graphic symbol 2 3 3 2 1 1 sym042 SOT89 6. Ordering information Table 3. Ordering information Type number Package PBSS4021NX Name Description Version SOT89 plastic surface-mounted package; die pad for good heat transfer; SOT89 3 leads 7. Marking Table 4. Marking codes Type number Marking code [1] PBSS4021NX %6D [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 5 V IC collector current - 7 A ICM peak collector current - 15 A IB base current - 1 A Ptot total power dissipation [1] - 600 mW [2] - 1650 mW [3] - 2500 mW PBSS4021NX Product data sheet single pulse; tp ≤ 1 ms Tamb ≤ 25 °C All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 2 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor Symbol Parameter Tj Min Max Unit junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Conditions Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aac174 3.0 Ptot (W) (1) 2.0 (2) 1.0 (3) 0.0 - 75 - 25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. 2 Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) Conditions in free air thermal resistance from junction to solder point [1] [2] [3] PBSS4021NX Product data sheet Min Typ Max Unit [1] - - 210 K/W [2] - - 75 K/W [3] - - 50 K/W - - 20 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 3 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor 006aac175 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.33 0.5 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 006aac176 duty cycle = 1 Zth(j-a) (K/W) 0.5 10 0.75 0.33 0.2 0.1 0.05 0.02 1 0.01 10- 1 10- 5 0 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10- 1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4021NX Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 4 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor 102 006aac177 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 10 0.33 0.2 0.1 0.05 1 0.01 10- 1 10- 5 0.02 0 10- 4 10- 3 10- 2 10- 1 1 102 10 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 20 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 20 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off VCE = 16 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 2 V; IC = 500 mA; pulsed; 300 550 - 300 550 - 300 500 - 250 450 - 100 200 - - 25 38 mV - 35 60 mV tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = 2 V; IC = 8 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = 1 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 1 A; IB = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C PBSS4021NX Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 5 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit IC = 2 A; IB = 40 mA; pulsed; - 48 75 mV - 78 120 mV - 85 140 mV - 137 210 mV - 19 28 mΩ - 0.82 0.9 V - 0.92 1.05 V - 0.74 0.85 V tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 4 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 4 A; IB = 40 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 7 A; IB = 350 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C RCEsat VBEsat collector-emitter saturation resistance IC = 5 A; IB = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C base-emitter saturation IC = 1 A; IB = 100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = 4 A; IB = 400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs; td delay time VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; - 40 - ns tr rise time IBoff = -0.05 A; Tamb = 25 °C - 40 - ns ton turn-on time - 80 - ns ts storage time - 650 - ns tf fall time VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; - 75 - ns toff turn-off time IBoff = -0.05 A; Tamb = 25 °C - 725 - ns fT transition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz; - 115 - MHz - 85 - pF δ ≤ 0.02 ; Tamb = 25 °C Tamb = 25 °C Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C PBSS4021NX Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 6 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor 006aac178 1000 16.0 hFE IC (A) 800 006aac179 IB (mA) = 70 63 12.0 (1) 56 49 42 35 28 600 (2) 21 8.0 14 400 (3) 0 10- 1 1 10 102 103 0.0 0.0 104 105 IC (mA) VCE = 2 V 1.0 2.0 3.0 4.0 5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C Fig. 6. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = −55 °C Fig. 5. 7 4.0 200 DC current gain as a function of collector current; typical values 006aac180 1.2 006aac181 1.4 VBE (V) VBEsat (V) 0.8 1.0 (1) (1) (2) 0.0 10- 1 Fig. 7. (2) (3) 0.4 1 10 0.6 102 103 0.2 10- 1 104 105 IC (mA) (3) 1 10 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PBSS4021NX Product data sheet Fig. 8. 103 104 105 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 11 December 2012 102 © NXP B.V. 2012. All rights reserved 7 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor 006aac182 1 006aac183 1 VCEsat (V) VCEsat (V) 10- 1 10- 1 (1) (2) 10- 2 (3) (1) (2) 10- 2 10- 3 10- 3 10- 1 Fig. 9. 1 102 10 103 10- 4 10- 1 104 105 IC (mA) (3) 1 10 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values 006aac184 102 102 103 104 105 IC (mA) Fig. 10. Collector-emitter saturation voltage as a function of collector current; typical values 006aac185 103 RCEsat (Ω) RCEsat (Ω) 102 10 10 (1) 1 1 (2) (1) (2) 10- 1 10- 2 10- 1 10- 1 (3) 1 10 102 10- 2 10- 1 103 104 IC (mA) (3) 1 10 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values PBSS4021NX Product data sheet 102 103 104 105 IC (mA) Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 8 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 13. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 14. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4021NX Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 9 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor 12. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 0.53 0.40 1.5 2 1.2 0.8 3 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig. 15. Package outline SOT89 13. Soldering 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 1 (3×) 4.85 1.1 (2×) 1.5 solder paste occupied area Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig. 16. Reflow soldering footprint for SOT89 PBSS4021NX Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 10 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig. 17. Wave soldering footprint for SOT89 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS4021NX v.3 20121211 Product data sheet - PBSS4021NX v.2 Modifications: • PBSS4021NX v.2 20121009 Product data sheet - PBSS4021NX v.1 PBSS4021NX v.1 20100401 Product data sheet - - PBSS4021NX Product data sheet Editorial update All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 11 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 12 / 14 PBSS4021NX NXP Semiconductors 20 V, 7 A NPN low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 9 Quality information ......................................... 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 December 2012 PBSS4021NX Product data sheet All information provided in this document is subject to legal disclaimers. 11 December 2012 © NXP B.V. 2012. All rights reserved 14 / 14