Data Sheet

SO
T8
9
BSS87
200 V, N-channel vertical D-MOS transistor
9 December 2014
Product data sheet
1. General description
N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (DMOSFET) in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device
(SMD) plastic package.
2. Features and benefits
•
•
•
Direct interface to Complementary (C-MOS) transistor and Transistor-Transistor
Logic (TTL) devices.
Very fast switching
No secondary breakdown
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Load-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
200
V
VGS
gate-source voltage
-20
-
20
V
ID
drain current
-
-
0.4
A
-
1.6
3
Ω
VGS = 10 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
drain-source on-state
resistance
[1]
VGS = 10 V; ID = 0.4 A; Tj = 25 °C
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
S
source
2
D
drain
3
G
gate
Simplified outline
Graphic symbol
D
G
3
2
1
SOT89
S
017aaa253
6. Ordering information
Table 3.
Ordering information
Type number
BSS87
Package
Name
Description
Version
SOT89
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4.
Marking codes
Type number
Marking code
BSS87
KA
BSS87
Product data sheet
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
200
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
[1]
-
0.7
A
VGS = 10 V; Tamb = 25 °C
[1]
-
0.4
A
VGS = 10 V; Tamb = 100 °C
[1]
-
0.2
A
-
1.6
A
[2]
-
0.58
W
[1]
-
1
W
-
12.5
W
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
0.4
A
Source-drain diode
IS
source current
[1]
[2]
BSS87
Product data sheet
Tamb = 25 °C
[1]
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
017aaa123
120
Pder
(%)
Ider
(%)
80
80
40
40
0
- 75
Fig. 1.
017aaa124
120
- 25
25
75
125
Tj (°C)
0
- 75
175
MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
Fig. 2.
- 25
25
75
125
Tj (°C)
175
MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
aaa-014573
10
Limit RDSon = VDS/ID
ID
(A)
tp = 10 µs
tp = 100 µs
1
tp = 1 ms
10-1
tp = 10 ms
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
10-2
10-3
10-1
tp = 100 ms
1
10
102
VDS (V)
103
IDM = single pulse
Fig. 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
BSS87
Product data sheet
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
[1]
[2]
Min
Typ
Max
Unit
[1]
-
190
216
K/W
[2]
-
105
125
K/W
[2]
-
36
42
K/W
-
6
10
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-014574
103
Zth(j-a)
(K/W)
102
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
1
10-3
0
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS87
Product data sheet
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
aaa-014575
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.01
1
10-3
0.02
0
10-2
10-1
FR4 PCB, mounting pad for drain 1 cm
Fig. 5.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS87
Product data sheet
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
200
-
-
V
VGSth
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C
0.8
-
2.8
V
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
200
nA
VDS = 200 V; VGS = 0 V; Tj = 25 °C
-
-
60
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
VGS = 10 V; ID = 0.4 A; Tj = 25 °C
-
1.6
3
Ω
VGS = 10 V; ID = 0.4 A; Tj = 150 °C
-
3.7
7
Ω
VGS = 4.5 V; ID = 0.3 A; Tj = 25 °C
-
1.9
4
Ω
VDS = 25 V; ID = 0.4 A; Tj = 25 °C
-
0.8
-
S
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
Dynamic characteristics
QG(tot)
total gate charge
VDS = 50 V; ID = 0.25 A; VGS = 10 V;
-
5.5
10
nC
QGS
gate-source charge
Tj = 25 °C
-
0.3
-
nC
QGD
gate-drain charge
-
1.4
-
nC
Ciss
input capacitance
VDS = 25 V; f = 1 MHz; VGS = 0 V;
-
100
120
pF
Coss
output capacitance
Tj = 25 °C
-
20
30
pF
Crss
reverse transfer
capacitance
-
10
15
pF
td(on)
turn-on delay time
VDS = 50 V; ID = 0.25 A; VGS = 10 V;
-
2.7
6
ns
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
3.7
6
ns
td(off)
turn-off delay time
-
16.4
30
ns
tf
fall time
-
7.5
20
ns
-
0.8
1.2
V
Source-drain diode
VSD
source-drain voltage
BSS87
Product data sheet
IS = 0.4 A; VGS = 0 V; Tj = 25 °C
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
aaa-014576
1.6
VGS = 10 V
ID
(A)
aaa-014577
10-3
4.5 V
3.5 V
ID
(A)
1.2
10-4
min
3V
0.8
typ
max
10-5
0.4
2.5 V
2V
0
Fig. 6.
0
1
2
3
4
VDS (V)
10-6
5
0
1
2
VGS (V)
3
Tj = 25 °C
Tj = 25 °C; VDS = 10 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Sub-threshold drain current as a function of
gate-source voltage
aaa-014578
6
2V
RDSon
(Ω)
aaa-014579
6
2.5 V
RDSon
(Ω)
3V
4
4
3.5 V
Tj = 150 °C
4V
4.5 V
2
2
VGS = 10 V
0
0
0.4
0.8
1.2
ID (A)
Tj = 25 °C
0
1.6
Tj = 25 °C
Fig. 8.
Product data sheet
2
4
6
8
10
VGS (V)
ID = 0.4 A
Drain-source on-state resistance as a function
of drain current; typical values
BSS87
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
aaa-014580
1.6
aaa-014581
2.5
a
ID
(A)
2.0
1.2
1.5
0.8
1.0
0.4
0.5
Tj = 150 °C
0
0
1
Tj = 25 °C
2
3
4
VGS (V)
0
-60
5
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-014582
3
60
120
aaa-014583
102
Ciss
Coss
typ
1
10
Crss
min
0
60
120
Tj (°C)
1
10-1
180
ID = 1 mA; VDS = VGS
Product data sheet
1
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
BSS87
180
C
(pF)
2
0
-60
Tj (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
103
max
VGS(th)
(V)
0
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
aaa-014584
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
VGS
4
QGS1
QGS2
QGS
2
QGD
QG(tot)
017aaa137
0
0
2
4
QG (nC)
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
6
ID = 0.25 A; VDS = 50 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-014585
1.6
IS
(A)
1.2
0.8
Tj = 150 °C
0.4
0
0
0.4
Tj = 25 °C
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
BSS87
Product data sheet
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
12. Package outline
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
1
2
HE
Lp
3
c
bp2
w M B
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
SOT89
JEDEC
JEITA
TO-243
SC-62
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
06-08-29
Fig. 18. Package outline SOT89
BSS87
Product data sheet
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
0.85
solder lands
1.7
1.2
4.6
solder resist
0.5
1
(3×)
4.85
occupied area
1.1
(2×)
1.5
solder paste
Dimensions in mm
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 19. Reflow soldering footprint for SOT89
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
(2×)
Dimensions in mm
preferred transport direction during soldering
1.9
1.5
(2×)
1.9
0.7
5.3
sot089_fw
Fig. 20. Wave soldering footprint for SOT89
BSS87
Product data sheet
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BSS87 v.5
20141209
Product data sheet
-
BSS87 v.4
Modifications:
•
BSS87 v.4
20140815
Product data sheet
-
BSS87 v.3
BSS87 v.3
20010518
Product specification
-
BSS87 v.2
BSS87 v.2
19970623
Product specification
-
BSS87 v.1
BSS87
Product data sheet
Figure 3 corrected.
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
[2]
[3]
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BSS87
Product data sheet
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BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
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Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
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TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BSS87
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
15 / 16
BSS87
NXP Semiconductors
200 V, N-channel vertical D-MOS transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................5
10
Characteristics ....................................................... 7
11
Test information ................................................... 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 December 2014
BSS87
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
16 / 16