S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pellet chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 40 A, 30 A EAS 5 mJ IR 1.0 μA, 5.0 μA VF 1.1 V TJ max. 150 °C Package DO-214AC (SMA) Diode variations Single die For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive, and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHSp-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code S1A S1B S1D S1G S1J S1K S1M UNIT SA SB SD SG SJ SK SM 100 200 400 600 800 1000 V Maximum recurrent peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current (fig. 1) IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM Non-repetitive peak reverse avalanche energy at 25 °C, IAS = 1 A, L = 10 mH EAS 5 mJ TJ, TSTG -55 to +150 °C Operating junction and storage temperature range 1.0 40 A 30 A Revision: 16-Feb-16 Document Number: 88711 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.0 A SYMBOL S1A S1B S1D TA = 25 °C S1K S1M UNIT V 1.0 IR TA = 125 °C S1J 1.1 VF Maximum DC reverse current at rated DC blocking voltage S1G 5.0 μA 50 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 1.8 μs Typical junction capacitance 4.0 V, 1 MHz CJ 12 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) S1A S1B S1D S1G S1J S1K S1M RJA 75 85 RJL 27 30 UNIT °C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE S1J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel S1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel S1JHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel S1JHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Average Forward Current (A) Resistive or Inductive Load 1.0 S1A thru S1J 0.8 0.6 S1K, S1M 0.4 0.2 0.2" x 0.2" (5.0 mm x 5.0 mm) Thick Copper Pad Areas Peak Forward Surge Current (A) 1.2 TL = 110 °C 8.3 ms Single Half Sine-Wave S1A thru S1J 10 S1K, S1M 0 0 0 20 40 60 80 100 120 140 160 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 16-Feb-16 Document Number: 88711 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor 100 TJ = 25 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 Pulse Width = 300 µs 1 % Duty Cycle 0.1 0.8 1.2 1.6 2.0 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 10 100 1000 Transient Thermal Impedance (°C/W) Instantaneous Reverse Leakage Current (µA) 10 1 0.01 0.01 0.4 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 125 °C 1 TJ = 75 °C 0.1 0.01 TJ = 25 °C 20 40 60 80 S1A thru S1J 10 Units Mounted on 0.20" x 0.20" (5.0 mm x 5.0 mm) x 0.5 Mil. Inches (0.013 mm) Thick Copper Land Areas 1 0.01 0.001 0 S1K, S1M 100 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 16-Feb-16 Document Number: 88711 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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