S1A, S1B, S1D, S1G, S1J, S1K, S1M Datasheet

S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
DO-214AC (SMA)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM
40 A, 30 A
EAS
5 mJ
IR
1.0 μA, 5.0 μA
VF
1.1 V
TJ max.
150 °C
Package
DO-214AC (SMA)
Diode variations
Single die
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHSp-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
SA
SB
SD
SG
SJ
SK
SM
100
200
400
600
800
1000
V
Maximum recurrent peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
EAS
5
mJ
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
1.0
40
A
30
A
Revision: 16-Feb-16
Document Number: 88711
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous
forward voltage
1.0 A
SYMBOL
S1A
S1B
S1D
TA = 25 °C
S1K
S1M
UNIT
V
1.0
IR
TA = 125 °C
S1J
1.1
VF
Maximum DC reverse current
at rated DC blocking voltage
S1G
5.0
μA
50
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.8
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
12
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
S1A
S1B
S1D
S1G
S1J
S1K
S1M
RJA
75
85
RJL
27
30
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1J-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
S1J-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
S1JHE3_A/H (1)
0.064
H
1800
7" diameter plastic tape and reel
S1JHE3_A/I (1)
0.064
I
7500
13" diameter plastic tape and reel
Note
AEC-Q101 qualified

(1)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Average Forward Current (A)
Resistive or Inductive Load
1.0
S1A thru S1J
0.8
0.6
S1K, S1M
0.4
0.2
0.2" x 0.2" (5.0 mm x 5.0 mm)
Thick Copper Pad Areas
Peak Forward Surge Current (A)
1.2
TL = 110 °C
8.3 ms Single Half Sine-Wave
S1A thru S1J
10
S1K, S1M
0
0
0
20
40
60
80
100
120
140
160
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 16-Feb-16
Document Number: 88711
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
100
TJ = 25 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
1
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.8
1.2
1.6
2.0
0.1
1
10
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Leakage
Current (µA)
10
1
0.01
0.01
0.4
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
TJ = 25 °C
20
40
60
80
S1A thru S1J
10
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
1
0.01
0.001
0
S1K, S1M
100
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 16-Feb-16
Document Number: 88711
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000