HighSpeed 3 - The Next Generation High Speed IGBT Family

The Next Generation High Speed
IGBT Family From Infineon
PCIM Europe
4th May 2010
Mark Thomas
IGBT Product Marketing
Infineon Power Discretes
Infineon …
the Leader in Power Semiconductors in 2008 *
„ Market leader in Power Semiconductors since 2003 !
„ Technology leadership leading to …
„ …innovative product portfolio for efficiency improvements and
system miniaturization
Global Power Semiconductor Market Ranking: Market Size in 2008 USD 14.0 bn
Rank
2008
Supplier
2007
2008
Change
1
Infineon
9.6%
10.2%
0.6%-pt
2
Vishay
6.7%
6.8.%
0.1%-pt
3
STMicroelectronics
7.3%
6.6%
-0.7%-pt
4
Fairchild
6.9%
6.5%
-0.4%-pt
5
Mitsubishi (inc. Powerex)
5.5%
6.4%
0.9%-pt
*Source: IMS Research, Global Market for Power Semiconductor Discretes & Modules,
July 2009
10.02.2010
2nd
December 2009
Copyright © Infineon Technologies 2010. All rights reserved.
Page 2
Infineon Discrete IGBTs …
… did you know?
Infineon is the #1 world wide supplier of discrete IGBTs …
… where 1 in every 4 discrete IGBT sold comes from Infineon*
*IMS-The World Market for Power Semiconductor Discretes & Modules 2009
How is this possible?
9High efficiency (cooler packages)
Low switching & conduction losses
9Excellent EMI behaviour
9Highest quality standards
9Logistic Management
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
Page 3
New 3rd Generation Family for Switching
Frequencies up to 100kHz
9Target applications:
9Welding / Solar / UPS
9PFC / SMPS
9Lamp ballast
9All high frequency – hard switching applications
9Lowest total losses at high speed operation
9Proven cosmic radiation robustness
9Low gate resistor selection possible (down to 5Ω) whilst
maintaining excellent switching behaviour
9Excellent EMI performance
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
Page 4
Switching losses (Eoff)
IGBT Performance Tuning for High Speed
Reduced carrier concentration:
Lower Eoff
Higher VCEsat
TRENCHSTOP™
The perfect switch
10.02.2010
10.05.2010
Conduction losses (VCEsat)
There is trade-off - but we haven’t given up!
Copyright © Infineon Technologies 2010. All rights reserved.
Page 5
High Speed IGBT Competitor Landscape
Trade-off diagram
Ic = In/2, Tj= 150°C
Eoff / μJ/A
32
30
28
IKP15N60T
SKB15N60HS
26
24
22
20
18
16
14
12
Competitor A
IGW40N60H3
HighSpeed3
Competitor B
1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
VCEsat / V
10.02.2010
HighSpeed3 family optimised for high switching
frequencies
Copyright © Infineon Technologies 2010. All rights reserved.
Applikationsbewertung
Page 6
Application test – PFC at 100kHz
Efficiency Uin115V; Frequenz 100kHz; Rgext=4.7ohm; Diode IDT06S60C 95.5
IKW30N60H3
Competitor 1
94.5
93.5
Competitor 2
Competitor 3
eta
92.5
Conventional
MOS
91.5
90.5
89.5
0
10.02.2010
200
Pout[W]
400
600
HighSpeed3 IGBT provides ~ 1% better efficiency than
conventional MOSFETs at 100 kHz!!
Copyright © Infineon Technologies 2010. All rights reserved.
Page 7
PFC Application Test at 100kHz
Guess Which Waveform is that of an IGBT?
EMI – What EMI?
Vce=100 V / div
„ Smooth switching waveforms in
application
Vge=5 V / div
„ No Current oscillations
„ No overvoltage
Ic=1 A / div
„Gate resistor selection
„ Go low for high performance
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
Page 8
Infineon’s High Speed 3 IGBT Portfolio
600V and 1200V Product Family
600V
TO-220
1200V
TO-247
TO-247
Continuous
collector
current
at T C =100°C
15A
Single IGBT
20A
IGP20N60H3
DuoPack ™
9
IGP25N120H3
9
IGP40N120H3
9
IKW15N120H3
9
IKW25N120H3
9
IKW40N120H3
9
9
25A
30A
40A
50A
IGP30N60H3
9
IGW40N60H3
IGW50N60H3
9
9
15A
10.02.2010
IGP15N120H3
20A
IKW20N60H3
9
25A
30A
40A
9
IKW40N60H3 9
IKW30N60H3
All devices are fully released
Copyright © Infineon Technologies 2010. All rights reserved.
Page 9
Summary
„ Infineon‘s new 600V and 1200V High Speed3 IGBT family has
been developed for operation up to 100kHz
„ Offering
„~1% efficiency improvement over all load conditions
compared to conventional planar MOSFETS
„Best class IGBT in PFC stage
„EMI and RF filtering requirements significantly reduced
„Temperature stable behaviour
„Smaller die sizes Æ smaller packages
„Excellent price / performance behaviour
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
Page 10
Thank you for your attention
Mark Thomas
Discrete IGBT Product Marketing
Please visit us at Hall 12 – Booth 404
www.infineon.com/igbt
10.02.2010
Copyright © Infineon Technologies 2010. All rights reserved.
Page 11