IDC06S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Chip Type VBR IDC06S60C 600V IF A SMPS, PFC, snubber C Die Size 6A Package 1.45 x 1.354 mm2 sawn on foil MECHANICAL PARAMETER: Raster size 1.45x 1.354 mm Anode pad size Area total / active 1.213 x 1.117 2 1.96 / 1.46 mm Thickness 355 µm Wafer size 75 mm Flat position 0 deg Max. possible chips per wafer 1861 pcs Passivation frontside Photoimide Anode metalization 3200 nm Al Cathode metalization Die bond 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Wire bond Al, ≤ 350µm Reject Ink Dot Size ∅ ≥ 0.3 mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006 IDC06S60C Maximum Ratings Parameter Symbol Repetitive peak reverse voltage V RRM 600 DC blocking voltage V DC 600 Continuous forward current limited by Tjmax Surge non repetitive forward current Condition Value IF TC =25° C, tP =10 ms 49 I F,RM TC = 100° C, T j = 1 5 0 ° C, D=0.1 28 Non-repetitive peak forward current I F,max TC =25° C, tp=10µs 210 Operating junction and storage temperature Tj , Ts t g Repetitive peak forward current limited by Tjmax V 6 IF,SM sine halfwave Unit A -55...+175 °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. Unit Reverse current IR V R =600V Tj= 2 5 ° C 0.7 80 µA Diode forward voltage VF I F = 6A Tj= 2 5 ° C 1.5 1.7 V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Parameter Symbol Total capacitive charge QC Conditions I F <=I F , m a x Value min. Tj = 150 °C Typ. max. 15 Unit nC di/dt=200A/µs Switching time 1) Total capacitance tc C V R =400V f=1MHz Tj = 150 °C <10 V R = 1V 280 V R = 3 0 0V 35 V R = 600V 35 1) ns pF tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to absence of minority carrier injection Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006 IDC06S60C CHIP DRAWING: Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006 IDC06S60C FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet INFINEON TECHNOLOGIES IDT06S60C Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2000 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 05.04.2006