Product Brief Breaking the switching-speed-limits in various topologies The new 1200V and 600V IGBT HighSpeed 3 family, optimized in every respect Applications The new 1200V and 600V 3 Generation HighSpeed IGBT family is optimized for hard- and soft-switching topologies. The family sets a new benchmark for switching losses and is recommended for use in topologies switching at more than 20kHz. rd The very short tail-current, and low turn off losses (25% less then the closest competitor) are the key features of this new family and up to 15% efficiency can be attained by implementing this family in your design. Not only does the family offer very low switching losses, the conduction losses are also very low. This is thanks to the world famous TRENCHSTOPTM technology from Infineon that has an intrinsically very low Vce(sat) behavior. Meanwhile the free wheeling diode in the duo packs is a 4th generation emitter controlled diode and is optimized for fast recovery whilst maintaining a high level of softness. This provides excellent complementary high speed switching performance, ruggedness and EMI behavior. Paired with the HighSpeed 3 IGBT you have the best device on the market. Infineon introduces a new family of 1200V and 600V IGBTs optimized for high-frequencyapplications which provide benchmark performance in terms of switching losses and efficiency. Trade-off Diagram @ 150°C HighSpeed 3rd Generation vs. 2 Main Competitor Products 0.30 Competitor 1 IKW25T120 0.25 Vce,sw = 600V, Rg = Rg_nom, Ic = Ic,nom Etot [mJ/A] 0.20 IKW25N120T2 0.15 Competitor 2 IKW25N120H3 0.10 0.05 0 2 2.4 2.8 3.2 3.6 4 4.4 VCEsat [V] Infineon’s new HighSpeed 3 IGBT is perfectly balanced between switching and conduction losses. www.infineon.com/igbt UPS Welding Solar inverters Main Features and Benefits Lowest switching losses for switching frequencies above 20kHz giving high efficiency Soft switching waveforms for excellent EMI behavior Low Vce(sat) giving Optimized diode for target low conduction losses applications meaning low diode losses and fast recovery time RoHS compliant Positive Vce(sat) temperature coefficient meaning thermal runaway not an issue and paralleling is easy 10µs short circuit rating Product Brief Breaking the switching-speed-limits in various topologies The new 1200V and 600V IGBT HighSpeed 3 family, optimized in every respect V, I Turn Off waveforms of Infineon’s new HighSpeed 3 IGBT Best Competitor vs. IKW40N120H3 Ic = 40A, Vdc = 800V, Rgoff = 5Ω, Tj = 25°C 5 4 3 2 1 0 -1 -2 -3 -4 -5 0.2 Vg ref Vce ref Ic ref The new HighSpeed 3 IGBT eliminates the tail-current at turn-off Drastically reducing the Eoff losses Vg dut Vce dut Ic dut Best Competitor IKW40N120H3 0.4 0.6 0.8 1 1.2 t [µs] Power Dissipation 805 505 30 Load Current [A] 35 405 305 205 105 0 10 20 30 40 Best Competitor IKW40N120H3 40 605 5 Vdc = 800V, D = 0.5, Tc = 100°C 45 Best Competitor / TO-264 IKW40N120H3 / TO-247-3 705 Power Dissipation @150°C [W] Load Current vs Frequency Vdc = 800V, D = 0.5, Ic = 40A, Tj = 150°C 50 60 70 25 20 15 Tj = 150°C Power Dissipation = 200W 10 5 80 Tj = 175°C Power Dissipation = 242W 0 10 20 Switching Frequency [kHz] 30 40 50 60 70 80 90 100 Switching Frequency [kHz] P = Vce x Ic x D + fsw x Esw,tot At 40A, Tj = 150°C, the IFX device provides 15% lower losses. Thanks to the higher Tjmax and lower losses, for a fixed Tc = 100°C the KW device can run up to 50% higher Load Current than best competitor’s device. Product Portfolio IC nom [A] IC puls [A] 600V 20 80 30 120 50 200 20 80 30 120 1200V 15 60 25 75 40 160 15 60 25 75 40 160 Ptot (Tc = 25°C) [W] Ptot (Tc = 100°C) [W] VCE(sat) (typ.)(25°C) [V] VCE(sat) (typ.)(175°C) [V] 170 187 333 170 187 85 94 167 85 94 1.95 1.95 1.85 1.95 1.95 2.5 2.5 2.25 2.5 2.5 217 326 483 217 326 483 105 156 220 105 156 220 2.05 2.05 2.05 2.05 2.05 2.05 2.7 2.7 2.7 2.7 2.7 2.7 How to reach us: http://www.infineon.com Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. TO-247 Single TO-247 DuoPack IGBT + Diode IGP20N60H3 IGP30N60H3 IGW50N60H3 IKW20N60H3 IKW30N60H3 IGW15N120H3 IGW25N120H3 IGW40N120H3 IKW15N120H3 IKW25N120H3 IKW40N120H3 Legal Disclaimer The information given in this Product Brief shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Published by Infineon Technologies AG Single IGBT Availability Now Now Now Now Now Now Now Now Now Now Now Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Order Number: B152-H9434-X-X-7600 NB10-1351