UNISONIC TECHNOLOGIES CO., LTD
UTT18P10
Power MOSFET
100V, 18A P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UTT18P10 is a P-channel power MOSFET using
UTC’s advanced technology to provide the customers with high
switching speed, cost-effectiveness and a minimum on-state
resistance. It can also withstand high energy in the avalanche.
FEATURES
* RDS(ON) < 0.20Ω @ VGS=-10V, ID=-18A
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT18P10L-TN3-R
UTT18P10G-TN3-R
UTT18P10L-TA3-T
UTT18P10G-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-252
TO-220
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
MARKING
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UTT18P10
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Continuous, VGSS@-10V
ID
-18
A
TC=25°C
Drain Current
Pulsed (Note 2)
IDM
-72
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
40
mJ
TO-252
150
Power Dissipation (TC=25°C)
PD
W
TO-220
140
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature
3. VDD=-50V, starting TJ=25°C, L=1mH, RG=25Ω, IAS=-9A. (See Figure 2a, 2b)
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
TO-252
TO-220
Junction to Case
RATINGS
1.0
1.1
θJC
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-100V, VGS=0V,
VGS=+20V
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-18A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=-25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-80V, VGS=-10V, ID=-18A,
Gate to Source Charge
QGS
See Fig 3 (Note 2)
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=-50V, ID=-18A, RG=9.1Ω,
RD = 2.4Ω, See Fig. 1(Note 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
TJ=25°C, IS=-18A, VGS=0V
Drain-Source Diode Forward Voltage
VSD
(Note 2)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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MIN TYP MAX UNIT
-100
-1.5
-1
+100
-100
V
µA
nA
nA
-2.5
0.20
V
Ω
1400
590
140
pF
pF
pF
61
14
29
nC
nC
nC
ns
ns
ns
ns
-18
A
-72
A
-5.0
V
16
73
34
57
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TEST CIRCUITS AND WAVEFORMS
VGS
VDS
VDS
90%
RG
D.U.T.
RD
-10V
VDD
+
Power MOSFET
Pulse Width≤1μs
Duty Factor≤0.1%
10%
VGS
TD(ON) TR
TD(OFF) TF
Fig. 1a Switching Time Test Circuit
Fig. 1b Switching Time Waveforms
Fig. 2a Unclampled Inductive Test Circuit
Fig. 2b Unclampled Inductive Waveforms
Fig.3a Gate Charge Test Circuit
Fig. 3b Gate Charge Waveform
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UTT18P10
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
Power MOSFET
(Note 1)
Driver Gate Drive
Period
P.W.
D=
P.W.
Period
VGS=10V *
(Note 2)
D.U.T. ISD Waveform
Reverse
Recovery
Current
(Note 3)
Body Diode Forward Current
D.U.T. VDS Waveform
Re-Applied
Voltage
Body Diode
di/dt
Diode
Recovery
dv/dt
VDD
Forward Drop
Inductor Curent
Ripple≤5
%
ISD
*** VGS=5V for Logic Level and 3V Drive Devices
For N and P Channel Power MOSFET
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-18A. (See Figure 2)
3. ISD≤-18A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤150°C
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QW-R502-619.E
UTT18P10
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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